IXFQ30N50P 반도체 회로 부품 판매점
PolarHV Power HiPerFET MOSFET
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 IXYS |
Advance Technical Information
PolarHVTM Power
HiPerFET MOSFET
N-Channel Enhancement
ModeAvalanche Rated
Fast Intrinsic Diode
IXFH 30N50P
IXFT 30N50P
IXFQ 30N50P
IXFV 30N50P
IXFV 30N50PS
V = 500 VDSS
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ID25 = 30 A
=RDS(on) 200 mΩ
trr < 200 ns
TO-3P (IXFQ)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
for 10s
Mounting torque (TO-247, TO-3P)
TO-247
TO-268
PLUS220, PLUS220SMD
TO-3P
Maximum Ratings
500 V
500 V G
±30 V
DS
±40 V TO-247 AD (IXFH)
30 A
75 A
30 A
40 mJ
1.2 J TO-268 (IXFT)
10 V/ns
(TAB)
(TAB)
460
-55 ... +150
150
-55 ... +150
300
260
W
G
S
°C
°C
°C PLUS220 (IXFV)
°C
°C
D (TAB)
1.13/10 Nm/lb.in.
6g
5g
4g
5.5 g
G
DS
PLUS220 SMD(IXFV..S)
D (TAB)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500
VGS(th)
VDS = VGS, ID = 4 mA
3.0
IGSS VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
165
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V
5.0 V
±100 nA
25 µA
250 µA
200 mΩ
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
DS99414(06/05)
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
IXFH 30N50P IXFQ 30N50P IXFT 30N50P
IXFV 30N50P IXFV 30N50PS
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
Typ. Max.
VDS= 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
17 27
4150
445
28
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 5 Ω (External)
25 ns
27 ns
75 ns
21 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
70 nC
27 nC
22 nC
(TO-247, PLUS220, TO-3P)
0.21
0.23 K/W
K/W
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Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise
typ.
specified)
Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
30 A
90 A
1.5 V
trr IF = 25 A; -di/dt = 100 A/µs
IRM VR = 100 V; VGS = 0 V
QRM
150 250 ns
6A
0.6 µC
Characteristic Curves
Fig. 1. Output Characteristics
@ 25ºC
30
27 VGS = 10V
8V
24
Fig. 2. Extended Output Characteristics
@ 25ºC
70
VGS = 10V
60 8V
21 7V 50
18 7V
40
15
12 30
9 6V 20
6
3 10 6V
0
0 12 3 4 56 7
VD S - Volts
0
0
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
3 6 9 12 15 18 21 24 27 30
VD S - Volts
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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IXFQ30N50P mosfet
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