NTUD3169CZ 반도체 회로 부품 판매점
Small Signal MOSFET
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 ON Semiconductor |
NTUD3169CZ
www.DataSheet4U.com
Small Signal MOSFET
20 V, 220 mA / −200 mA, Complementary,
1.0 x 1.0 mm SOT−963 Package
Features
• Complementary MOSFET Device
• Offers a Low RDS(on) Solution in the Ultra Small 1.0x1.0 mm
Package
• 1.5 V Gate Voltage Rating
• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
• This is a Pb−Free Device
Applications
• Load Switch with Level Shift
• Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
tv5s
Steady
State
tv5s
Steady
State
tv5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
TA = 25°C
PD
20
±8
220
160
280
−200
−140
−250
125
200
V
V
mA
mW
Pulsed Drain Current N−Channel
P−Channel tp = 10 ms
IDM
800
−600
mA
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TJ,
TSTG
IS
TL
−55 to
150
200
260
°C
mA
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
1 oz. Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
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V(BR)DSS
N−Channel
20 V
P−Channel
20 V
RDS(on) Max
1.5 W @ 4.5 V
2.0 W @ 2.5 V
3.0 W @ 1.8 V
4.5 W @ 1.5 V
5.0 W @ −4.5 V
6.0 W @ −2.5 V
7.0 W @ −1.8 V
10 W @ −1.5 V
PINOUT: SOT−963
ID Max
0.22 A
−0.2 A
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
MARKING
DIAGRAM
SOT−963
CASE 527AD
2MG
1
2 = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device
NTUD3169CZT5G
Package
SOT−963
(Pb−Free)
Shipping†
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
August, 2008 − Rev. 0
1
Publication Order Number:
NTUD3169CZ/D
NTUD3169CZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction−to−Ambient – Steady State, Minimum Pad (Note 3)
Junction−to−Ambient – t v 5 s (Note 3)
RqJA
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu.
Max
1000
600
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Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol N/P
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
IGSS
N
P
VGS = 0 V
ID = 250 mA
ID = −250 mA
N VGS = 0 V, VDS = 5.0 V
TJ = 25°C
TJ = 85°C
P VGS = 0 V, VDS = −5.0 V
TJ = 25°C
TJ = 85°C
N VGS = 0 V, VDS = 16 V
P VGS = 0 V, VDS= −16 V
TJ = 25°C
N
P VDS = 0 V, VGS = ±5.0 V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Source−Drain Diode Voltage
CAPACITANCES
VGS(TH)
RDS(on)
gFS
VSD
N VGS = VDS ID = 250 mA
P ID = −250 mA
N VGS = 4.5 V, ID = 100 mA
P VGS = −4.5V, ID = −100 mA
N VGS = 2.5 V, ID = 50 mA
P VGS = −2.5V, ID = −50 mA
N VGS = 1.8 V, ID = 20 mA
P VGS = −1.8V, ID = −20 mA
N VGS = 1.5 V, ID = 10 mA
P VGS = −1.5 V, ID = −10 mA
N VGS = 1.2 V, ID = 1.0 mA
P VGS = −1.2 V, ID = −1.0 mA
N VDS = 5.0 V, ID = 125 mA
P VDS = −5.0 V, ID = −125 mA
N VGS = 0 V, IS = 10 mA
TJ = 25°C
P VGS = 0 V, IS = −10 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
N
f = 1 MHz, VGS = 0 V
VDS = 15 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
P
f = 1 MHz, VGS = 0 V
VDS = −15 V
4. Switching characteristics are independent of operating junction temperatures
Min
20
−20
0.4
−0.4
Typ Max
50
200
−50
−200
100
−100
±100
±100
1.0
−1.0
0.75 1.5
2.0 5.0
1.0 2.0
2.6 6.0
1.4 3.0
3.4 7.0
1.8 4.5
4.0 10
2.8
6.0
0.48
0.35
0.6 1.0
−0.6 −1.0
12.5
3.6
2.6
13.5
3.8
2.0
Unit
V
nA
nA
nA
V
W
S
V
pF
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NTUD3169CZ mosfet
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