APT11N80KC3 반도체 회로 부품 판매점
Super Junction MOSFET
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 Advanced Power Technology |
APT11N80KC3
www.DataSheet4U.com
800V 11A 0.450Ω
Super Junction MOSFET
COOLMOS
Power Semiconductors
TO-220
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-220 Package
GDS
D
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT11N80KC3
UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
800 Volts
11
Amps
33
±20 Volts
±30
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
156
1.25
Watts
W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 640V, ID = 11A, TJ = 125°C)
Repetitive Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
-55 to 150
260
50
11
0.2
470
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 7.1A)
Zero Gate Voltage Drain Current (VDS = 800, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 800, VGS = 0V, TJ = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 680µA)
800 Volts
0.39 0.45 Ohms
0.5 20
µA
200
±100 nA
2.1 3 3.9 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
DYNAMIC CHARACTERISTICS
APT11N80KC3
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 400V
ID = 11A @ 25°C
RESISTIVE SWITCHING
VGS = 10V
VDD = 400V
ID = 11A @ 25°C
RG = 7.5Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 533V, VGS = 15V
ID = 11A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 533V VGS = 15V
ID = 11A, RG = 5Ω
MIN
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1585
770 pF
18
60
8 nC
30
25
15 ns
70 80
7 10
165
50
µJ
305
65
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -11A)
t rr Reverse Recovery Time (IS = 11A, dlS/dt = -100A/µs, VR = 640V)
Q rr Reverse Recovery Charge (IS = 11A, dlS/dt = -100A/µs, VR = 640V)
dv/dt Peak Diode Recovery dv/dt 5
11 Amps
33
1 1.2 Volts
550 ns
10 µC
6 V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.80
62
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 194mH, RG = 25Ω, Peak IL = 2.2A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID 11A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.90
0.80
0.9
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0 10-5
0.7
0.5
Note:
0.3 t1
0.1
0.05 SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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( apt )
APT11N80KC3 mosfet
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