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SYNC POWER |
SPN8882
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8882 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. The SPN8882 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
z Power Management in Note book
z Powered System
z DC/DC Converter
z Load Switch
FEATURES
30V/40A,RDS(ON)= 10mΩ@VGS=10V
30V/40A,RDS(ON)= 14mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252,TO-251 package design
PIN CONFIGURATION
TO-252
TO-251
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PART MARKING
2007/07/20 Ver.2
Page 1
SPN8882
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
ORDERING INFORMATION
Part Number
SPN8882T252R
SPN8882T251T
※ SPN8882T252RG : Tape Reel ; Pb – Free
※ SPN8882T251RG : Tube ; Pb – Free
Symbol
G
S
D
Package
TO-252
TO-251
Description
Gate
Source
Drain
Part Marking
SPN8882
SPN8882
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Drain-Source Voltage
Parameter
Symbol
VDSS
Gate –Source Voltage
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Continuous Drain Current
Pulsed Drain Current
TA=25℃
TA=100℃
VGSS
ID
IDM
Continuous Drain Current
Single Pulse Drain to Source Avalanche Energy − Starting
(TJ=25°C , VDD=27V , VGS=10V , IAS=28A , L=0.1mH )
Power Dissipation
TO-252-2L
TA=25℃
TO-251
IS
EAS
PD
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TJ
TSTG
RθJA
Typical
30
±20
60
40
100
50
41
40
55
150
-55/150
100
2007/07/20 Ver.2
Unit
V
V
A
A
A
mJ
W
℃
℃
℃/W
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