FDP15N40 반도체 회로 부품 판매점
N-Channel MOSFET
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 Fairchild Semiconductor |
FDP15N40 / FDPF15N40
N-Channel MOSFET
400V, 15A, 0.3Ω
Features
• RDS(on) = 0.24Ω ( Typ.)@ VGS = 10V, ID = 7.5A
• Low Gate Charge ( Typ. 28nC)
• Low Crss ( Typ. 17pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
October 2008
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power
factor correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
www.DataSVheGeStS4U.com
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP15N40 FDPF15N40
400
±30
15 15*
9 9*
60 60*
731
15
17
15
170 40
1.45 0.3
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP15N40
0.7
0.5
62.5
FDPF15N40
3.0
-
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDP15N40 / FDPF15N40 Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP15N40
Device
FDP15N40
Package
TO-220
Reel Size
-
Tape Width
-
FDPF15N40
FDPF15N40
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25oC
ID = 250μA, Referenced to 25oC
VDS = 400V, VGS = 0V
VDS = 320V, TC = 125oC
VGS = ±30V, VDS = 0V
400
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 7.5A
VDS = 20V, ID = 7.5A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 320V, ID = 15A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
www.DataSheet4U.com
Drain-Source Diode Characteristics
VDD = 200V, ID = 15A
RG = 25Ω
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 15A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 15A
dIF/dt = 100A/μs
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 6.5mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 15A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
(Note 4, 5)
-
-
-
-
(Note 4)
-
-
-
-
-
Typ.
-
0.5
-
-
-
-
0.24
15.3
1310
210
17
28
8
12
26
55
72
40
-
-
-
333
3.24
Max. Units
-
-
1
10
±100
V
V/oC
μA
nA
5.0 V
0.3 Ω
-S
1750
280
25
36
-
-
pF
pF
pF
nC
nC
nC
62 ns
120 ns
154 ns
90 ns
15 A
60 A
1.4 V
- ns
- μC
FDP15N40 / FDPF15N40 Rev. A
2 www.fairchildsemi.com
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제조업체: Fairchild Semiconductor
( fairchild )
FDP15N40 mosfet
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