IXFC36N50P 반도체 회로 부품 판매점
Polar MOSFETs
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 IXYS Corporation |
Advance Technical Information
PolarHVTM HiPerFET IXFC 36N50P
Power MOSFET
IXFR 36N50P
(Electrically Isolated Back Surface)
www.datasheet4u.com
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS =
ID25 =
≤RDS(on)
trr ≤
500
18
190
250
V
A
mΩ
ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
Maximum Ratings
500 V
500 V
ISOPLUS220 (IXFC)
E153432
± 30
± 40
18
100
24
50
1.5
V
VG
DS
A Isolated back surface*
A
A ISOPLUS247 (IXFR)
mJ E153432
J
dv/dt
PD
TJ
TJM
Tstg
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
20
156
-55 ... +150
150
-55 ... +150
V/ns
G
W D S Isolated back surface
°C
°C G = Gate
°C S = Source
D = Drain
TL
VISOL
FC
Weight
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting Force
(IXFR)
(IXFC)
(IXFR)
(IXFC)
300
2500
°C
V~
11..65 / 2.5..15
20..120 / 4.5..25N/lb
3
5
N/lb
g
g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Characteristic Values
Min. Typ. Max.
500 V
2.5 5.0 V
± 100 nA
TJ = 125°C
25 μA
250 μA
190 mΩ
Features
z International standard isolated
packages
z UL recognized packages
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z Fast intrinsic diode
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99312(10/05)
IXFC 36N50P
IXFR 36N50P
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
Min. Typ. Max.
gfs VDS = 20 V; ID = T, Note 1
wCwisws .datasheet4u.com
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 0.5 ID25
RG = 4 Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RthJC
RthCK
25 35
4800
510
60
29
23
82
23
135
30
65
0.8
0.15
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
trr IF = 25A, -di/dt = 100 A/μs
QRM VR = 100 V; VGS = 0 V
24 A
100 A
1.5 V
250 ns
0.6 μC
Notes:
1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;
2. Test current IT = 18A.
E
E1
L2
A
A1
E1
D
L3
L1
L
D1
2X e
3X b
c
A2
Terminals: 1-Gate 2-Drain
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
ISOPLUS247 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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IXFC36N50P mosfet
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