IXFA10N60P 반도체 회로 부품 판매점
Polar MOSFETs
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 IXYS Corporation |
Advance Technical Information
PolarHVTM HiPerFET
www.DataSheet4U.com
Power MOSFET
IXFA 10N60P
IXFP 10N60P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS =
ID25 =
RtrDrS(on)
≤
≤
600 V
10 A
740 mΩ
250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings TO-220 (IXFP)
600 V
600 V
± 30
± 40
10
25
10
18
500
10
V
V
A
A
A
mJ
mJ
V/ns
G DS
TO-263 (IXFA)
G
S
(TAB)
(TAB)
200
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
1.13/10 Nm/lb.in.
4g
3g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Fast Intrinsic Diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
600 V
VGS(th)
VDS = VGS, ID = 1 mA
3.0 5.5 V
IGSS VGS = ± 30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
5 µA
150 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
740 mΩ
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99424(09/05)
IXFA 10N60P
IXFP 10N60P
Symbol
Test Conditions
www.DataSheet4U.com
Characteristic Values
(TJ
=
25°C
unless
Min.
otherwise
Typ.
specified)
Max.
gfs
Ciss
Coss
Crss
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
5 11
1610
165
14
S
pF
pF
pF
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 10 Ω (External)
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
23 ns
27 ns
65 ns
21 ns
34 nC
12 nC
11 nC
RthJC
RthCK
(TO-220)
0.25
0.62 K/W
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C
unless
Min.
otherwise
Typ.
specified)
Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
10 A
25 A
1.5 V
trr IF = 10 A, -di/dt = 100 A/µs, VGS=0V, VR=100V
250 ns
QRM
0.32
µC
trr 3 A
TO-263 (IXFA) Outline
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
TO-220 (IXFP) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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( ixys )
IXFA10N60P mosfet
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