IXFA4N100Q 반도체 회로 부품 판매점
HiPerFET Power MOSFETs Q-Class
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 IXYS Corporation |
HiPerFETwww.DataSheet4U.comTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Preliminary Data Sheet
IXFA 4N100Q
IXFP 4N100Q
VDSS
ID25
RDS(on)
=1000 V
= 4A
= 3.0 W
trr £ 250 ns
Symbol
VDSS
VDGR
VGS
V
GSM
I
D25
I
DM
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
I
GSS
IDSS
R
DS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
T
C
= 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
1000
1000
V
V
±20 V
±30 V
4A
16 A
4A
20 mJ
700 mJ
5 V/ns
150 W
-55 to +150
150
-55 to +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
4g
2g
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 1.5 mA
1000
3.0
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = VDSS
V =0V
GS
TJ = 25°C
T
J
= 125°C
V = 10 V, I = 0.5 I
GS D D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
5.0 V
±100 nA
50 mA
1 mA
3.0 W
TO-220 (IXFP)
GDS
TO-263 (IXFA)
G
S
D (TAB)
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load
Switching (UIS)
• Molding epoxies meet UL 94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98705 (02/04/00)
1-4
Swywmw.bDoaltaSheeTt4eUs.ct oCmonditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
VDS = 20 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
1.5 2.5
1050
120
30
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7 W (External),
17
15
32
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
39
9
22
nC
nC
nC
(TO-220)
0.8 K/W
0.25 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
I V =0V
S GS
I Repetitive; pulse width limited by T
SM JM
VSD IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
4A
16 A
1.5 V
trr 250 ns
QRM
IF = IS, -di/dt = 100 A/ms, VR = 100 V
0.52 mC
IRM 1.8 A
IXFA 4N100Q
IXFP 4N100Q
TO-220 AB (IXFP) Outline
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.35 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
TO-263 AA (IXFA) Outline
© 2000 IXYS All rights reserved
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06
2.03
4.83
2.79
0.51
1.14
0.99
1.40
0.46
1.14
0.74
1.40
8.64
7.11
9.65
8.13
9.65
6.86
2.54
10.29
8.13
BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380
.270
.100
.405
.320
BSC
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
.018 .029
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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( ixys )
IXFA4N100Q mosfet
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