SiHFR9310 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 Vishay Siliconix |
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 400
VGS = - 10 V
13
3.2
5.0
Single
7.0
DPAK
(TO-252)
D
IPAK
(TO-251)
D
GS
GD S
S
G
D
P-Channel MOSFET
FEATURES
• P-Channel
• Surface Mount (IRFR9310, SiHFR9310)
• Straight Lead (IRFU9310, SiHFU9310)
• Advanced Process Technology
• Fast Switching
• Fully Avalanche Rated
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and
Halogen-free
SiHFR9310-GE3
Lead (Pb)-free
IRFR9310PbF
SiHFR9310-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR9310TRL-GE3
IRFR9310TRLPbFa
SiHFR9310TL-E3a
DPAK (TO-252)
SiHFR9310TR-GE3
IRFR9310TRPbFa
SiHFR9310T-E3a
DPAK (TO-252)
SiHFR9310TRR-GE3
IRFR9310TRRPbFa
SiHFR9310TR-E3a
IPAK (TO-251)
SiHFU9310-GE3
IRFU9310PbF
SiHFU9310-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at - 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 57 mH, Rg = 25 , IAS = - 1.8 A (see fig. 12).
c. ISD - 1.1 A, dI/dt 450 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
- 400
± 20
- 1.8
- 1.1
- 7.2
0.40
92
- 1.8
5.0
50
- 24
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0166-Rev. D, 04-Feb-13
1
Document Number: 91284
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, ID = - 250 μA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = - 400 V, VGS = 0 V
VDS = - 320 V, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = - 1.1 Ab
VDS = - 50 V, ID = - 1.1 A
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 1.1 A, VDS = - 320 V,
see fig. 6 and 13b
VDD = - 200 V, ID = - 1.1 A,
Rg = 21 , RD = 180 , see fig. 10b
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contactc
D
G
S
MIN.
- 400
-
- 2.0
-
-
-
-
0.91
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
- 0.41
-
-
-
-
-
-
270
50
8.0
-
-
-
11
10
25
24
4.5
7.5
MAX. UNIT
-
-
- 4.0
± 100
- 100
- 500
7.0
-
V
V/°C
V
nA
μA
S
-
- pF
-
13
3.2 nC
5.0
-
-
ns
-
-
-
nH
-
Continuous Source-Drain Diode Current IS MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - - 1.9
A
- - - 7.6
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 1.1 A, VGS = 0 Vb
-
-
- 4.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = -1.1 A, dI/dt = 100 A/μsb
-
-
170 260 ns
640 960 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. This is applied for IPAK, LS of DPAK is measured between lead and center of die contact.
S13-0166-Rev. D, 04-Feb-13
2
Document Number: 91284
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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( vishay )
SiHFR9310 mosfet
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