STB40NF10 반도체 회로 부품 판매점
N-channel Power MOSFET
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 STMicroelectronics |
STP40NF10
STB40NF10 - STB40NF10-1
N-CHANNEL 100V - 0.024Ω - 50A TO-220/D2PAK/I2PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP40NF10
www.DataSheet4U.cSoTmB40NF10
STB40NF10-1
100 V
100 V
100 V
< 0.028 Ω
< 0.028 Ω
< 0.028 Ω
50 A
50 A
50 A
s TYPICAL RDS(on) = 0.024Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
3
2
1
TO-220
3
1
D2PAK
123
I2PAK
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID(*)
ID
IDM (l)
PTOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2)
Tstg
Single Pulse Avalanche Energy
Storage Temperature
Tj Operating Junction Temperature
(q) Pulse width limited by safe operating area
(*) Limited by Package
September 2002
Value
100
100
± 20
50
35
200
150
1
20
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
– 55 to 175
°C
(1) ISD ≤40A, di/dt ≤600A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, ID = 40A, VDD = 50V
1/11
STP40NF10 - STB40NF10 - STB40NF10-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
1
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
www.DataSheet4U.comV(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
100
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 20 A
Min.
2
Typ.
2.8
0.024
Max.
4
0.028
Unit
V
Ω
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 25V, ID = 20 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
20
1780
265
112
Max.
Unit
S
pF
pF
pF
2/11
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( stm )
STB40NF10 mosfet
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[ STB40NF10.PDF ]
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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관련 데이터시트
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N-channel Power MOSFET - STMicroelectronics
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