2SK1297 반도체 회로 부품 판매점
Silicon N-Channel MOS FET
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 Hitachi Semiconductor |
2SK1297
Silicon N-Channel MOS FET
www.DataSheet4U.com
Application
High speed power switching
Features
x Low on-resistance
x High speed switching
x Low drive current
x 4 V gate drive device
Can be driven from 5 V source
x Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
2SK1297
Absolute Maximum Ratings (Ta = 25GC)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
www.DataSheet4U.com Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW d 10 Ps, duty cycle d 1%
q2. Value at TC = 25 C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
IDR
Pch*2
Tch
Tstg
Ratings
60
r20
40
160
40
100
150
–55 to +150
Unit
V
V
A
A
A
W
qC
qC
2
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제조업체: Hitachi Semiconductor
( hitachi )
2SK1297 mosfet
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[ 2SK1297.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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