AP9926EM-A 반도체 회로 부품 판매점
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
 Advanced Power Electronics |
Advanced Power
Electronics Corp.
AP9926EM-A
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
▼ Capable of 2.5V gate drive
▼ Surface mount package
www.DataSheet4U.com
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
16V
27mΩ
7A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
16
±12
7
5.6
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
201112041
AP9926EM-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
www.DataSheet4U.com
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=5V, ID=6A
VDS=16V, VGS=0V
VDS=12V ,VGS=0V
VGS=±12V
ID=6A
VDS=10V
VGS=4.5V
VDS=10V
ID=1A
RG=3.3Ω,VGS=10V
RD=10Ω
VGS=0V
VDS=16V
f=1.0MHz
Gate Resistance
f=1.0MHz
16 -
-V
- 0.01 - V/℃
- - 27 mΩ
- - 40 mΩ
- - 1.2 V
- 13 - S
- - 1 uA
- - 25 uA
- - ±10 uA
- 14 22 nC
- 1.4 - nC
- 7 - nC
- 10 - ns
- 13 - ns
- 26 - ns
- 8 - ns
- 420 670 pF
- 280 - pF
- 120 - pF
- 3 -Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
Test Conditions
IS=1.7A, VGS=0V
Min. Typ. Max. Units
- - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135 ℃/W when mounted on Min. copper pad.
|
PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Advanced Power Electronics
( ape )
AP9926EM-A mosfet
데이터시트 다운로드 :
[ AP9926EM-A.PDF ]
[ AP9926EM-A 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
