IRFN9240SMD 반도체 회로 부품 판매점
P-CHANNEL POWER MOSFET
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 Seme LAB |
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IRFN9240SMD
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
13
3 .6 0 (0 .1 4 2 )
M ax.
P–CHANNEL
POWER MOSFET
VDSS
ID(cont)
RDS(on)
FEATURES
–200V
–8A
0.051W
2
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
SMD1 PACKAGE
Pad 1 – Source Pad 2 – Drain
Pad 3 – Gate
• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
Note: IRFxxxSM also available with
pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current (VGS = 0 , Tcase = 25°C)
–8.0A
ID Continuous Drain Current (VGS = 0 , Tcase = 100°C)
IDM Pulsed Drain Current 1
–5.0A
–32A
PD Power Dissipation @ Tcase = 25°C
75W
Linear Derating Factor
0.6W/°C
EAS
dv/dt
Single Pulse Avalanche Energy 2
Peak Diode Recovery 3
500mJ
–5.5V/ns
TJ , Tstg
TL
RqJC
RqJ–PCB
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
–55 to 150°C
300°C
1.67°C/W
4°C/W
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) @ VDD = –50V , L ³ 11.7mH , RG = 25W , Peak IL = –8A , Starting TJ = 25°C
3) @ ISD £ –8A , di/dt £ –150A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 9.1W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 7/00
www.DataSheet4U.com
IRFN9240SMD
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance 1
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance 1
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
VGS = 0
ID = –1mA
Reference to 25°C
ID = –1mA
VGS = –10V
VGS = –10V
VDS = VGS
VDS ³ –15V
VGS = 0
VGS = –20V
VGS = 20V
ID = –5A
ID = –8A
ID = –250mA
IDS = –5A
VDS = 0.8BVDSS
TJ = 125°C
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 1
Gate – Source Charge 1
Gate – Drain (“Miller”) Charge 1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VGS = 0
VDS = –25V
f = 1MHz
VGS = –10V
ID = –8A
VDS = 0.5BVDSS
ID = –8A
VDS = 0.5BVDSS
VDD = –100V
ID = –8A
RG = 9.1W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current
ISM Pulse Source Current 2
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn–On Time
IS = –8A
TJ = 25°C
VGS = 0
IF = –8A
TJ = 25°C
di / dt £ –100A/ms VDD £ –50V
PACKAGE CHARACTERISTICS
LD Internal Drain Inductance (from centre of drain pad to die)
LS Internal Source Inductance (from centre of source pad to end of source bond wire)
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Min. Typ.
–200
–0.020
–2
4.0
1200
570
81
28
3.0
4.5
negligible
0.8
2.8
Max. Unit
V
V/°C
0.51
0.52
–4
–25
–250
–100
100
W
V
S((WW)
mA
nA
pF
60 nC
15
nC
38
35
85
ns
85
65
–8
A
–32
–4.6 V
440 ns
7.2 mC
nH
Prelim. 7/00
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IRFN9240SMD mosfet
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