IRFN350 반도체 회로 부품 판매점
POWER MOSFET N-CHANNEL
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 International Rectifier |
PD - 91551C
POWER MOSFET
SURFACE MOUNT(SMD-1)
Product Summary
Part Number RDS(on)
IRFN350
0.315 Ω
ID
14A
IRFN350
JANTX2N7227U
JANTXV2N7227U
REF:MIL-PRF-19500/592
400V, N-CHANNEL
HEXFET® MOSFETTECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
SMD-1
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Surface Mount
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
14
9.0
56
150
1.2
±20
700
14
15
4.0
-55 to 150
300(for 5 seconds)
2.6 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
1/25/01
IRFN350
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
400
—
—
—
2.0
6.0
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
Typ Max Units
—— V
0.46 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.315
— 0.415
— 4.0
——
— 25
— 250
— 100
— -100
— 110
— 18
— 65
— 35
— 190
— 170
— 130
4.0 —
2600
680
250
—
—
—
Ω
V
S( )
µA
nA
nC
ns
VGS = 10V, ID = 9.0A ➃
VGS = 10V, ID = 14A
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 9.0A ➃
VDS= 320V ,VGS=0V
VDS = 320V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 14A
VDS =200V
VDD = 200V, ID = 14A,
VGS =10V, RG = 2.35Ω
nH Measured from the center of drain
pad to center of source pad.
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — —
ISM Pulse Source Current (Body Diode) ➀
——
14
56
A
VSD Diode Forward Voltage
— — 1.7 V
trr Reverse Recovery Time
— — 1200 nS
QRR Reverse Recovery Charge
— — 11 µC
Tj = 25°C, IS = 14A, VGS = 0V ➃
Tj = 25°C, IF = 14A, di/dt ≤ 100A/µs
VDD ≤ 30V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
— — 0.83
°C/W
— 3.0 —
Test Conditions
Soldered to a copper-clad PC board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
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( ir )
IRFN350 mosfet
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