MRF6P18190HR6 반도체 회로 부품 판매점
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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 Freescale Semiconductor |
www.DaFtarSeheesect4aUl.ecoSmemiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W - CDMA base station applications with frequencies from
1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
•
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2000
=
mA,
Power Gain — 15.9 dB
Drain Efficiency — 27.5%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 41 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1880 MHz, 190 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Document Number: MRF6P18190H
Rev. 0, 4/2005
MRF6P18190HR6
1805 - 1880 MHz, 44 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
648
3.7
Storage Temperature Range
Operating Junction Temperature
CW Operation
Tstg - 65 to +150
TJ 200
CW 190
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 190 W CW
Case Temperature 76°C, 44 W CW
RθJC
0.27
0.30
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6P18190HR6
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10 µAdc
IDSS
—
—
1 µAdc
IGSS
—
—
1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 µAdc)
VGS(th)
1
2
3 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1000 mAdc)
VGS(Q)
2
2.8
4 Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
—
0.21
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs — 5.3 — S
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.5 — pF
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, Pout = 44 W Avg., f1 = 1807.5 MHz,
f2 = 1817.5 MHz and f1 = 1867.5 MHz, f2 = 1877.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps 14.5 15.9 17.5 dB
Drain Efficiency
ηD 25.5 27.5 —
%
Intermodulation Distortion
IM3 — - 37 - 35 dBc
Adjacent Channel Power Ratio
ACPR
—
- 41 - 38 dBc
Input Return Loss
IRL — - 12 - 9 dB
1. Each side of device measured separately.
2. Part is internally matched both on input and output.
3. Measurements made with device in push - pull configuration.
MRF6P18190HR6
2
RF Device Data
Freescale Semiconductor
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MRF6P18190HR6
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET - Freescale Semiconductor
