IRHY53130CM 반도체 회로 부품 판매점
(IRHY5x130CM) RADIATION HARDENED POWER MOSFET
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 International Rectifier |
www.DataSheet4U.com
PD - 93826D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHY57130CM 100K Rads (Si) 0.07Ω
IRHY53130CM 300K Rads (Si) 0.07Ω
IRHY54130CM 500K Rads (Si) 0.07Ω
IRHY58130CM1000K Rads (Si) 0.085Ω
IRHY57130CM
JANSR2N7484T3
100V, N-CHANNEL
REF: MIL-PRF-19500/702
5 TECHNOLOGY
ID
18A*
18A*
18A*
18A*
QPL Part Number
JANSR2N7484T3
JANSF2N7484T3
JANSG2N7484T3
JANSH2N7484T3
TO-257AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications.These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
18*
14 A
72
75 W
0.6 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy Á
87
mJ
IAR Avalanche Current À
18 A
EAR
Repetitive Avalanche Energy À
7.5 mJ
dv/dt
Peak Diode Recovery dv/dt Â
1.4 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063in./1.6mm from case for 10sec)
oC
Weight
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
4/26/06
IRHY57130CM, JANSR2N7484T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
—
—
2.0
13
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
Typ Max Units
——
V
0.11 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.07 Ω
VGS = 12V, ID = 14A Ã
— 4.0
——
— 10
— 25
— 100
— -100
— 50
— 7.4
— 20
— 25
— 100
— 35
— 30
6.8 —
1005
365
50
—
—
—
V
S( )
µA
nA
nC
ns
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 14A Ã
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 18A
VDS = 50V
VDD = 50V, ID = 18A,
VGS =12V, RG = 7.5Ω
nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 18*
ISM Pulse Source Current (Body Diode) À
— — 72
A
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 250 ns
QRR Reverse Recovery Charge
— — 850 nC
Tj = 25°C, IS = 18A, VGS = 0V Ã
Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
— — 1.67
°C/W
— — 80
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2 www.irf.com
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( ir )
IRHY53130CM mosfet
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