IRF7379PBF 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 International Rectifier |
www.DataSheet4U.com
PD - 95300
IRF7379PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Complimentary Half Bridge
l Surface Mount
l Fully Avalanche Rated
l Lead-Free
Description
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
G1 2
S2 3
7 D1 VDSS 30V -30V
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
RDS(on) 0.045Ω 0.090Ω
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
VSD
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance Ratings
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
N-Channel
P-Channel
30 -30
5.8 -4.3
4.6 -3.4
46 -34
2.5
0.02
± 20
5.0 -5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Max.
50
Units
°C/W
1
10/7/04
IRF7379PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
30 — —
-30 — — V
— 0.032 —
— -0.037 — V/°C
— 0.038 0.045
— 0.055 0.075
— 0.070 0.090 Ω
— 0.130 0.180
1.0 — —
-1.0 — — V
5.2 — —
2.5 — — S
— — 1.0
— — -1.0
— — 25 µA
— — -25
–– — ±100
— — 25
— — 25
— — 2.9
— — 2.9 nC
— — 7.9
— — 9.0
— 6.8 —
— 11 —
— 21 —
— 17 —
— 22 — ns
— 25 —
— 7.7 —
— 18 —
— 4.0 —
— 6.0 — nH
— 520 —
— 440 —
— 180 —
— 200 — pF
— 72 —
— 93 —
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.9A
VGS = -10V, ID =- 4.3A
VGS = -4.5V, ID =- 3.7A
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 2.4A
VDS = -24V, ID = -1.8A
VDS = 24 V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24 V, VGS = 0V, TJ = 125°C
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = ± 20V
N-Channel
ID = 2.4A, VDS = 24V, VGS = 10V
P-Channel
ID = -1.8A, VDS = -24V, VGS = -10V
N-Channel
VDD = 15V, ID = 2.4A, RG = 6.0Ω,
RD = 6.2Ω
P-Channel
VDD = -15V, ID = -1.8A, RG = 6.0Ω,
RD = 8.2Ω
Between lead, 6mm (0.25in.) from
package and center of die contact
N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Min.
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
Typ. Max. Units
— 3.1
— -3.1
— 46
A
— -34
— 1.0
— -1.0
V
47
53
71
80
ns
56
66
84
99
nC
Conditions
TJ = 25°C, IS = 1.8A, VGS = 0V
TJ = 25°C, IS = -1.8A, VGS = 0V
N-Channel
TJ = 25°C, IF = 2.4A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -1.8A, di/dt = -100A/µs
Pulse width ≤ 300µs; duty cycle ≤ 2%.
N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
Surface mounted on FR-4 board, t ≤ 10sec.
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제조업체: International Rectifier
( ir )
IRF7379PBF mosfet
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