STN2NF06 반도체 회로 부품 판매점
N-CHANNEL POWER MOSFET
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 ST Microelectronics |
® STN2NF06
N - CHANNEL 60V - 0.12Ω - 2A - SOT-223
STripFET™ POWER MOSFET
TYPE
ST N2NF06
VDSS
60 V
RDS(on)
< 0.15 Ω
ID
2A
s TYPICAL RDS(on) = 0.12 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
www.DataSheet4U.com
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™ ” stip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V D GR
V GS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Pto t Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tst g St orage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
New RDS (on) spec. starting from JULY 98
July 1998
Va l u e
60
60
± 20
2
1 .8
8
2 .5
0.02
6
-65 to 150
150
(1) ISD ≤ 8 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W/oC
V/ns
oC
oC
1/9
STN2NF06
THERMAL DATA
Rthj-pcb
Rt hj- amb
Tl
Thermal Resistance Junction-PC Board
Thermal Resistance Junction-ambient
(Surface Mounted)
Maximum Lead Temperature For Soldering
Purpose
Max
Max
50
60
260
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 25 V)
Max Valu e
2
20
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 6A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
2
Typ .
3
Max.
4
Unit
V
0.12 0.15
Ω
2A
DYNAMIC
S ymb ol
gfs (∗)
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1 A
Min.
1
Typ .
3
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0 V
760
100
30
pF
pF
pF
2/9
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STN2NF06 mosfet
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