FDS8670 반도체 회로 부품 판매점
30V N-Channel PowerTrench MOSFET
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 Fairchild Semiconductor |
www.DataSheet4U.com
August 2006
FDS8670
30V N-Channel PowerTrench® MOSFET
tm
General Description
This device has been designed specifically to improve
the efficiency of DC-DC converters. Using new
techniques in MOSFET construction, the various
components of gate charge and capacitance have been
optimized to reduce switching losses. Low gate
resistance and very low Miller charge enable excellent
performance with both adaptive and fixed dead time
gate drive circuits. Very low Rds(on) has been
maintained to provide an extremely versatile device.
Applications
• High Efficiency DC-DC Converters:
• Notebook Vcore Power Supply
• Telecom Brick Synchronous Rectifier
• Multi purpose Point Of Load
Features
• 21 A, 30 V
Max RDS(ON) = 3.7 mΩ @ VGS = 10 V
Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely low
RDS(ON) and gate charge
• Minimal Qgd (5.5 nC typical)
• 100% RG tested (0.9 Ω typical)
• RoHS Compliant
DD
D
D
SO-8
S S SG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8670
FDS8670
13’’
54
63
72
81
Ratings
30
±20
21
105
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS8670 Rev C (W)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 21 A
VGS = 4.5 V, ID = 18 A
VGS=10 V, ID =21 A, TJ=125°C
VDS = 10 V, ID = 21 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg(TOT)
Total Gate Charge at VGS = 10V
Qg(TOT)
Total Gate Charge at VGS = 5V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDD = 15 V, ID = 21 A
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A (Note 2)
Voltage
trr
Diode Reverse Recovery Time
IF = 21 A,
IRM Diode Reverse Recovery Current dIF/dt = 100 A/µs
Qrr Diode Reverse Recovery Charge
Min Typ Max Units
30
39
V
mV/°C
1
±100
µA
nA
1 1.4 3
V
–5 mV/°C
3.3 3.7
4.2 5.0
4.4 5.5
118
mΩ
S
4040
1730
160
0.2 0.9 1.5
pF
pF
pF
Ω
12
11
56
68
58.5
30
9.5
5.5
21
20
90
108
82
42
ns
ns
ns
ns
nC
nC
nC
nC
0.7 1.2
51
1.5
37
V
ns
A
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS8670 Rev C (W)
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FDS8670 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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