FDY4000CZ 반도체 회로 부품 판매점
Complementary N & P-Channel PowerTrench MOSFET
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 Fairchild Semiconductor |
August 2006
FDY4000CZ
Complementary N & P-Channel PowerTrench®
MOSFET
tm
Features
Q1: N-Channel
Max rDS(on) = 0.7Ω at VGS = 4.5V, ID = 600mA
Max rDS(on) = 0.85Ω at VGS = 2.5V, ID = 500mA
Max rDS(on) = 1.25Ω at VGS = 1.8V, ID =150 mA
Q2: P-Channel
Max rDS(on) = 1.2Ω at VGS = -4.5V, ID = -350mA
Max rDS(on) = 1.6Ω at VGS = -2.5V, ID = -300mA
Max rDS(on) = 2.7Ω at VGS = -1.8V, ID = -150mA
ESD protection diode (note 3)
RoHS Compliant
General Description
This Complementary N & P-Channel MOSFET has been
designed using Fairchild Semiconductor’s advanced Power
Trench® process to optimize the rDS(ON) @ VGS= 2.5V and
specify the rDS(ON) @ VGS = 1.8V.
Applications
Level shifting
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
6
5
4
www.DataSheet4U.com
S2 4
G2 5
3 D2
2 G1
1
2
3
D1 6
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation (Steady State)
TJ, TSTG
Operating and Storage Jaunting Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
RθJA
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
Device Marking
E
Device
FDY4000CZ
Package
SC89-6
Reel Size
7”
1 S1
Q1 Q2
20 -20
±12 ±8
600 -350
1000
-1000
625
446
-55 to 150
Units
V
V
mA
mW
°C
200 °C/W
280
Tape Width
8mm
Quantity
3000units
©2006 Fairchild Semiconductor Corporation
FDY4000CZ Rev. B
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Volt-
age
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage
ID = 250µA, VGS = 0V
ID = -250µA, VGS = 0V
ID = 250µA, referenced to 25°C
ID = -250µA, referenced to 25°C
VDS = 16V, VDS =0V
VDS = -16V, VDS =0V
VGS = ±12V, VDS = 0V
VGS = ±4.5V, VDS = 0V
VGS = ±8V, VDS = 0V
Q1 20
Q2 -20
V
Q1
Q2
15
-15
mV/°C
Q1
Q2
1
-3
µA
Q1 ±10
Q1 ±1 µA
Q2 ±10
On Characteristics (note 2)
VGS(th)
∆VGS(th)
∆TJ
rDS(on)
gFS
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
VGS = VDS, ID = -250µA
Gate to Source Threshold Voltage ID = 250µA, referenced to 25°C
Temperature Coefficient
ID = -250µA, referenced to 25°C
Drain to Source On Resistance
VGS = 4.5V, ID = 600mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 150mA,
VGS = 4.5V, ID = 600mA,TJ = 125°C
VGS = -4.5V, ID = --350mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
VGS = -4.5V, ID = -350mA, TJ =125°C
Forward Transconductance
VDS = 5V, ID = 600mA
VDS = -5V, ID = -350mA
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.6 1.0 1.5
-0.6 -1.0 -1.5
V
-3
3
mV/°C
0.30
0.40
0.80
0.35
0.70
0.85
1.25
1.00
0.5 1.2
0.8 1.6
1.3 2.7
0.7 1.6
Ω
1.8
1
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Q1
VDS = 10V, VGS = 0V, f = 1MHz
Q2
VDS = -10V, VGS = 0V, f = 1MHz
Q1
Q2
Q1
Q2
Q1
Q2
60
100
20
30
10
15
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate to Source Gate Charge
Qgd Gate to Drain “Miller”Charge
Q1
VDD= 10V, ID = 1A,
VGS= 4.5V, Rg = 6Ω
Q2
VDD= -10V, ID = -0.5A,
VGS= -4.5V, Rg = 6Ω
Q1
VDS= 10V, ID = 600mA, VGS= 4.5V
Q2
VDS= -10V, ID = -350mA, VGS= -4.5V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
6 12
6 12
8 16
13 23
8 16
8 16
2.4 4.8
12
0.8 1.1
1.0 1.4
0.16
0.2
0.26
0.3
ns
ns
ns
ns
nC
nC
nC
FDY4000CZ Rev. B
2 www.fairchildsemi.com
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FDY4000CZ mosfet
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