FDS8884 반도체 회로 부품 판매점
N-Channel MOSFET
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 Fairchild Semiconductor |
February 2006
FDS8884
N-Channel PowerTrench® MOSFET
30V, 8.5A, 23mΩ
General Descriptions
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
AD FREE I
Features
Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A
Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A
Low gate charge
100% RG Tested
RoHS Compliant
DD
D
D
SO-8
S SSG
www.DataSheet4U.com
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current Continuous
Pulsed
(Note 1a)
EAS Single Pulse Avalanche Energy
PD
Power dissipation
Derate above 25oC
(Note 2)
TJ, TSTG
Operating and Storage Temperature
Ratings
30
±20
8.5
40
32
2.5
20
-55 to 150
Units
V
V
A
A
mJ
W
mW/oC
oC
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
(Note 1a)
(Note 1)
50
25
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDS8884
Device
FDS8884
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS8884 Rev. A
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
2ID5o=C250µA, referenced to
VDS = 24V
VGS = 0V
VGS = ±20V
TJ = 125oC
30
V
23 mV/oC
1
250
±100
µA
nA
On Characteristics (Note 3)
VGS(th)
∆VGS(th)
∆ TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = VDS, ID = 250µA
2ID5o=C250µA, referenced to
VGS = 10V, ID = 8.5A,
VGS = 4.5V , ID = 7.5A,
VGS
TJ =
= 10V,
125oC
ID
=
8.5A,
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
1.2 1.7 2.5
V
-4.9 mV/oC
19 23
23 30 mΩ
26 32
475 635
100 135
65 100
0.9 1.6
pF
pF
pF
Ω
Switching Characteristics (Note 3)
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
VDD = 15V, ID = 8.5A
VGS = 10V, RGS = 33Ω
VDS = 15V, VGS = 10V
ID = 8.5A
VDS = 15V, VGS = 5V
ID = 8.5A
5 10 ns
9 18 ns
42 68 ns
21 34 ns
9.2 13 nC
5.0 7 nC
1.5 nC
2.0 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = 8.5A
ISD = 2.1A
IF = 8.5A, di/dt = 100A/µs
0.9 1.25
V
0.8 1.0
V
33 ns
20 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when
mounted on a
minimun pad
Scale 1 : 1 on letter size paper
2:
3:
SPtualsrteinTgeTsJt:=Pu2l5s°eCW, Lidt=h1<m30H0, µIAsS,=D8uAty,
VDD = 27V,
Cycle <2%.
VGS
=
10V.
FDS8884 Rev. A
2
www.fairchildsemi.com
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FDS8884 mosfet
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