AP2305GN 반도체 회로 부품 판매점
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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 Advanced Power Electronics |
Advanced Power
Electronics Corp.
AP2305GN
Pb Free Plating Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Description
D
SOT-23 G
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
BVDSS
RDS(ON)
ID
-20V
65mΩ
- 4.2A
D
G
S
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Rating
- 20
± 12
-4.2
-3.4
-10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
90
Unit
℃/W
Data and specifications subject to change without notice
200509032
AP2305GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance VGS=-10V, ID=-4.5A
VGS=-4.5V, ID=-4.2A
VGS=-2.5V, ID=-2.0A
VGS=-1.8V, ID=-1.0A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=55oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2.8A
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V
VGS= ± 12V
ID=-4.2A
VDS=-16V
VGS=-4.5V
VDS=-15V
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ID=-4.2A
RG=6Ω,VGS=-10V
RD=3.6Ω
VGS=0V
VDS=-15V
f=1.0MHz
-20 - - V
- -0.1 - V/℃
- - 53 mΩ
- - 65 mΩ
- - 100 mΩ
- - 250 mΩ
-0.5 - - V
-9-S
- - -1 uA
- - -10 uA
- - ±100 nA
- 10.6 - nC
- 2.32 - nC
- 3.68 - nC
- 5.9 - ns
- 3.6 - ns
- 32.4 - ns
- 2.6 - ns
- 740 - pF
- 167 - pF
- 126 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.2A, VGS=0V
IS=-4.2A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 27.7 - ns
- 22 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
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제조업체: Advanced Power Electronics
( ape )
AP2305GN mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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