AP2307N 반도체 회로 부품 판매점
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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 Advanced Power Electronics |
Advanced Power
Electronics Corp.
AP2307N
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Description
D
SOT-23 G
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
BVDSS
RDS(ON)
ID
-16V
60mΩ
- 4A
D
G
S
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
-16
±8
-4
-3.3
-12
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
90
Unit
℃/W
Data and specifications subject to change without notice
200414041
AP2307N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-3.0A
Gate Threshold Voltage
VGS=-1.8V, ID=-2.0A
VDS=VGS, ID=-250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=-5V, ID=-4A
VDS=-16V, VGS=0V
VDS=-12V, VGS=0V
VGS=±8V
ID=-4A
VDS=-12V
VGS=-4.5V
VDS=-10V
ID=-1A
RG=3.3Ω,VGS=-10V
RD=10Ω
VGS=0V
VDS=-15V
f=1.0MHz
-16 - - V
- -0.01 - V/℃
- - 60 mΩ
- - 70 mΩ
- - 90 mΩ
- - -1.0 V
- 12 -
S
- - -1 uA
- - -25 uA
- - ±100 nA
- 15 24 nC
- 1.3 - nC
- 4 - nC
- 8 - ns
- 11 - ns
- 54 - ns
- 36 - ns
- 985 1580 pF
- 180 - pF
- 160 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-1.2A, VGS=0V
IS=-4A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 39 - ns
- 26 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
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제조업체: Advanced Power Electronics
( ape )
AP2307N mosfet
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[ AP2307N.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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