FDD6N25 반도체 회로 부품 판매점
N-Channel MOSFET
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 Fairchild Semiconductor |
FDD6N25 / FDU6N25
250V N-Channel MOSFET
Features
• 4.4A, 250V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 4.5 nC)
• Low Crss ( typical 5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
February 2007
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
DD
GS
D-PAK
FDD Series
GDS
I-PAK
FDU Series
G
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FDD6N25 / FDU6N25
250
4.4
2.6
18
±30
45
4.4
5
4.5
50
0.4
-55 to +150
300
S
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ
--
--
Max
2.5
110
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FDD6N25 / FDU6N25 Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FDD6N25
FDD6N25
FDU6N25
Device
FDD6N25TM
FDD6N25TF
FDU6N25TU
Package
D-PAK
D-PAK
I-PAK
Reel Size
380mm
380mm
-
Tape Width
16mm
16mm
-
Quantity
2500
2000
70
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C
VDS = 250V, VGS = 0V
VDS = 200V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.2A
250
--
--
--
--
--
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 2.2A
(Note 4) --
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 125V, ID = 6A
RG = 25Ω
VDS = 200V, ID = 6A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 4.4A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 6A
dIF/dt =100A/µs
(Note 4)
--
--
--
--
--
Typ.
--
0.25
--
--
--
--
--
0.9
5.5
194
38
5
10
25
7
12
4.5
1.5
1.8
--
--
--
145
0.55
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
5.0 V
1.1 Ω
-- S
250 pF
50 pF
8 pF
30 ns
60 ns
24 ns
34 ns
6 nC
-- nC
-- nC
4.4 A
18 A
1.4 V
-- ns
-- µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.7mH, IAS = 4.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 4.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDD6N25 / FDU6N25 Rev. A
2
www.fairchildsemi.com
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FDD6N25 mosfet
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