STSJ18NF3LL 반도체 회로 부품 판매점
LOW GATE CHARGE STripFET II POWER MOSFET
|
|
 ST Microelectronics |
www.DataSheet4U.com
STSJ18NF3LL
N-CHANNEL 30V - 0.016 Ω - 18A PowerSO-8™
LOW GATE CHARGE STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STSJ18NF3LL
30 V <0.019 Ω 18 A
■ TYPICAL RDS(on) = 0.016 Ω @ 10V
■ TYPICAL Qg = 12.5 nC @ 4.5 V
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ IMPROVED JUNCTION-CASE THERMAL
RESISTANCE
Figure 1:Package
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. This silicon, housed
in thermally improved SO-8™ package, exhibits
optimal on-resistance versus gate charge trade-
off plus lower Rthj-c.
PowerSO-8™
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCS
DRAIN CONTACT ALSO ON THE BACKSIDE
Table 2: Order Codes
SALES TYPE
STSJ18NF3LL
MARKING
18F3LL)
PACKAGE
PowerSO-8
Table 3: ABSOLUTE MAXIMUM RATING
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C (*)
ID Drain Current (continuous) at TC = 100°C(*)
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Total Dissipation at TC = 25°C (#)
(•) Pulse width limited by safe operating area.
Value
30
30
± 16
18
18
72
70
3
(*) Value limited by wires bonding
PACKAGING
TAPE & REEL
Unit
V
V
V
A
A
A
W
W
March 2005
Rev. 1.0
1/9
STSJ18NF3LL
Table 4: THERMAL DATA
Rthj-c
Rthj-amb
Tj
Tstg
Thermal Resistance Junction-case
(*)Thermal Resistance Junction-ambient
Maximum Operating Junction Temperature
Storage Temperature
Max 1.8
Max 41.7
150
-55 to 150
°C/W
°C/W
°C
°C
(*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t > 10 sec.
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
Table 5: OFF
Symbol
Parameter
V(BR)DSS
Drain-source
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
IGSS
Gate-body Leakage
Current (VDS = 0)
Test Conditions
ID = 250 µA, VGS = 0
Min.
30
VDS = Max Rating
VDS = Max Rating TC = 125°C
VGS = ± 16 V
Typ.
Max.
1
10
±100
Unit
V
µA
µA
nA
Table 6: ON (*)
Symbol
Parameter
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 4.5 V
ID = 9 A
ID = 9 A
Min.
1
Typ. Max.
0.016 0.019
0.019 0.022
Unit
V
Ω
Ω
Table 7: DYNAMIC
Symbol
Parameter
gfs (*)
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS=15 V
ID = 9 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
17
800
250
60
Max.
Unit
S
pF
pF
pF
2/9
|
PDF 파일 내의 페이지 : 총 9 페이지
제조업체: ST Microelectronics
( stm )
STSJ18NF3LL mosfet
데이터시트 다운로드 :
[ STSJ18NF3LL.PDF ]
[ STSJ18NF3LL 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
