MRF9200LSR3 반도체 회로 부품 판매점
N-Channel Enhancement-Mode Lateral MOSFETs
|
|
 Freescale Semiconductor |
www.DataSheet4U.com
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large−signal, common−source amplifier applica-
tions in 26 volt base station equipment.
• TITDyrQapfif=cica2lC4So0ind0gemlseA−8,CTPahorruroiteu=rgN4h0−1CW3D)a.MtCtsAhaAPnvengre.f,ol IrBSma−an9nd5cwCeidD@thM8=A81(0P.2Mil2oH8t,8zS:MVynHDcDz,.=PPa2eg6aiknV/go,lts,
Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 25%
ACPR @ 750 kHz Offset — −46.5 dBc @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts N−CDMA
Output Power
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Integrated ESD Protection
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9200L
Rev. 1, 12/2004
MRF9200LR3
MRF9200LSR3
880 MHz, 40 W AVG., 26 V
SINGLE N−CDMA
LATERAL N−CHANNEL
RF POWER MOSFETs
CASE 465B−03, STYLE 1
NI−880
MRF9200LR3
Table 1. Maximum Ratings
CASE 465C−02, STYLE 1
NI−880S
MRF9200LSR3
Rating
Symbol
Value
Unit
Drain−Source Voltage
Gate−Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
−0.5, +65
−0.5, +15
625
3.6
Vdc
Vdc
W
W/°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Case Temperature 60°C
Case Temperature 80°C
Tstg − 65 to +150 °C
TJ 200 °C
CW
200
160
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 60°C, 200 W CW
Case Temperature 80°C, 40 W CW
RθJC
0.28
0.34
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes − AN1955.
NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2004. All rights reserved.
Freescale Semiconductor
Wireless RF Product Device Data
MRF9200LR3 MRF9200LSR3
5−1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model (per JESD22−A114)
1C (Minimum)
Machine Model (per EIA/JESD22−A115)
B (Minimum)
Charge Device Model (per JESD22−C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
Gate−Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10 µAdc
IDSS
—
—
1 µAdc
IGSS
—
—
1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 2400 mAdc)
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 6.0 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 6.7 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th)
1.5
2.7
3.5
Vdc
VGS(Q)
3
3.7 4.5 Vdc
VDS(on)
—
0.25 0.4
Vdc
gfs — 8.8 — S
Crss — 2.5 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 2400 mA, Pout = 40 W Avg. N−CDMA,
f = 880 MHz, Single−Carrier N−CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 16 17.5 — dB
Drain Efficiency
ηD 22 25 — %
Adjacent Channel Power Ratio
ACPR
—
−46.5
−45
dBc
Input Return Loss
IRL — −13 −9 dB
1. Part is internally matched both on input and output.
MRF9200LR3 MRF9200LSR3
2
Freescale Semiconductor
Wireless RF Product Device Data
|
PDF 파일 내의 페이지 : 총 12 페이지
제조업체: Freescale Semiconductor
( freescale )
MRF9200LSR3 mosfet
데이터시트 다운로드 :
[ MRF9200LSR3.PDF ]
[ MRF9200LSR3 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
