STB3NC60 반도체 회로 부품 판매점
N-CHANNEL Power MOSFET
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 ST Microelectronics |
® STB3NC60
N - CHANNEL 600V - 3.3Ω - 3A - D2PAK/I2PAK
PowerMESH™ ΙΙ MOSFET
TYPE
STB3NC60
VDSS
600 V
RDS(on)
< 3.6 Ω
ID
3A
ν TYPICAL RDS(on) = 3.3 Ω
ν EXTREMELY HIGH dv/dt CAPABILITY
ν 100% AVALANCHE TESTED
ν VERY LOW INTRINSIC CAPACITANCES
ν GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™ II is the evolution of the first
generation of MESH OVERLAY™ . The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
ν HIGH CURRENT, HIGH SPEED SWITCHING
ν SWITCH MODE POWER SUPPLIES (SMPS)
ν DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
123
I2PAK
TO-262
(Suffix "-1")
3
1
D2PAK
TO-263
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
IDM(•)
Ptot
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
600
600
± 30
3
1.9
12
80
0.64
4
-65 to 150
150
(1) ISD ≤3A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W/oC
V/ns
oC
oC
February 2000
1/9
STB3NC60
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.56
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
3
100
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
600
Typ.
Max.
Unit
V
1
50
± 100
µA
µA
nA
ON (∗)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1.5 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
Typ.
3
3.3
Max.
4
3.6
Unit
V
Ω
3A
DYNAMIC
Symbol
gfs (∗)
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.5 A
Min.
Typ.
2
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
400 pF
57 pF
7 pF
2/9
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STB3NC60 mosfet
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