RA60H4047M1 반도체 회로 부품 판매점
RF MOSFET MODULE
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 Mitsubishi Electric |
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA60H4047M1
RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA60H4047M1 is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 400- to
470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the nominal output signal (Pout=60W) attenuates up to
60 dB. The output power and the drain current increase as the
gate voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
VGG is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 5mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input
power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current IGG=5mA (typ) @ VGG=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2M
RoHS COMPLIANCE
• RA60H4047M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA60H4047M1-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA60H4047M1
MITSUBISHI ELECTRIC
1/9
3rd Mar 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA60H4047M1
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<5V, Pin=0W
VGG Gate Voltage
VDD<12.5V, Pin=50mW
Pin
Pout
Tcase(OP)
Input Power
Output Power
Operation Case Temperature Range
f=400-470MHz,
VGG<5V
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
RATING
17
6
100
80
-30 to +100
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
F Frequency Range
Pout Output Power
VDD=12.5V
ηT Total Efficiency
2fo 2nd Harmonic
VGG=5V
Pin=50mW
ρin Input VSWR
IGG Gate Current
VDD=0V, VGG=5V, Pin=0W
IDD Leakage Current
VDD=17V, VGG=0V, Pin=0W
— Stability
VDD=10.0-15.2V, Pin=25-70mW,
5<Pout <65W (VGG control), Load VSWR=3:1
—
Load VSWR Tolerance
VDD=15.2V, Pin=50mW,
Pout=60W (VGG control), Load VSWR=20:1
400 470 MHz
60 W
40 %
-40 dBc
3:1 —
5 6 mA
1 mA
No parasitic oscillation
—
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA60H4047M1
MITSUBISHI ELECTRIC
2/9
3rd Mar2008
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제조업체: Mitsubishi Electric
( mitsubishi )
RA60H4047M1 mosfet
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