NID9N05CL 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 ON Semiconductor |
www.DataSheet4U.com
NID9N05CL
Power MOSFET
9.0 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
in a DPAK Package
Benefits
• High Energy Capability for Inductive Loads
• Low Switching Noise Generation
Features
• Diode Clamp Between Gate and Source
• ESD Protection − HBM 5000 V
• Active Over−Voltage Gate to Drain Clamp
• Scalable to Lower or Higher RDS(on)
• Internal Series Gate Resistance
Applications
• Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA = 25°C
Drain Current − Single Pulse (tp = 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
52−59
±15
9.0
35
28.8
−55 to
175
V
V
A
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 125°C
(VDD = 50 V, ID(pk) = 1.5 A, VGS = 10 V,
RG = 25 W)
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 s
EAS 160 mJ
RqJC
RqJA
RqJA
TL
5.2 °C/W
72
100
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, (Cu area 1.127 in2)
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu area 0.412 in2)
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VDSS
(Clamped)
52 V
RDS(ON) TYP
90 mΩ
ID MAX
(Limited)
9.0 A
Drain
(Pins 2, 4)
Gate
(Pin 1)
Overvoltage
Protection
RG
ESD Protection
MPWR
Source
(Pin 3)
MARKING
DIAGRAM
DPAK
CASE 369C
STYLE 2
1
2
3
AYWW
D9N05CL
4
D9N05CL
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
1 = Gate
2 = Drain
3 = Source
4 = Drain
ORDERING INFORMATION
Device
Package
Shipping†
NID9N05CLT4
NID9N05CL
DPAK
DPAK
2500/Tape & Reel
75 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 5
1
Publication Order Number:
NID9N05CL/D
NID9N05CL
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 V, ID = 1.0 mA, TJ = 25°C)
(VGS = 0 V, ID = 1.0 mA, TJ = −40°C to 125°C)
Temperature Coefficient (Negative)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 40 V, VGS = 0 V)
(VDS = 40 V, VGS = 0 V, TJ = 125°C)
Gate−Body Leakage Current
(VGS = ±8 V, VDS = 0 V)
(VGS = ±14 V, VDS = 0 V)
IDSS
IGSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 100 mA)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 4.0 V, ID = 1.5 A)
(VGS = 3.5 V, ID = 0.6 A)
(VGS = 3.0 V, ID = 0.2 A)
(VGS = 12 V, ID = 9.0 A)
(VGS = 12 V, ID = 12 A)
RDS(on)
Forward Transconductance (Note 3) (VDS = 15 V, ID = 9.0 A)
DYNAMIC CHARACTERISTICS
gFS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 40 V, VGS = 0 V,
f = 10 kHz)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 10 kHz)
Ciss
Coss
Crss
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
52
50.8
−
−
−
−
−
1.3
−
−
−
−
70
67
−
−
−
−
−
−
−
Typ
55
54
−10
−
−
−
±22
1.75
−4.5
153
175
−
90
95
24
155
60
25
175
70
30
Max Unit
59 V
59.5 V
− mV/°C
mA
10
25
mA
±10
−
2.5
−
181
364
1210
−
−
−
V
mV/°C
mW
Mhos
250 pF
100
40
− pF
−
−
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NID9N05CL mosfet
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