IRHQ8110 반도체 회로 부품 판매점
(IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
|
|
 International Rectifier |
www.DataSheet4U.com
PD - 93785A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level
IRHQ7110 100K Rads (Si)
IRHQ3110 300K Rads (Si)
IRHQ4110 600K Rads (Si)
IRHQ8110 1000K Rads (Si)
RDS(on)
0.6Ω
0.6Ω
0.6Ω
0.75Ω
ID
3.0A
3.0A
3.0A
3.0A
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices re-
tain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of parallel-
ing and temperature stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
IRHQ7110
100V, QUAD N-CHANNEL
RAD-Hard™ HEXFET®
MOSFETTECHNOLOGY
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
3.0
1.9 A
12
12 W
0.1 W/°C
±20 V
85 mJ
3.0 A
1.2 mJ
3.0
-55 to 150
V/ns
oC
300 (for 5s)
0.89 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
12/27/00
IRHQ7110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
—
—
—
2.0
1.4
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Typ Max Units
——
V
0.11 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.62
— 0.60 Ω
— 4.0 V
— — S( )
—
—
25
250
µA
— 100
— -100 nA
— 11
— 4.0 nC
— 5.5
VGS = 12V, ID = 3.0A ➃
VGS = 12V, ID = 1.9A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 1.9A ➃
VDS= 80V, VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 3.0A
VDS = 50V
— 13
— 16
— 23 ns
VDD = 50V, ID = 3.0A,
VGS = 12V, RG = 7.5Ω
— 15
6.1 — nH Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 270 —
— 110 —
— 23 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ➀
—
—
—
—
3.0
12
A
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 173 nS
QRR Reverse Recovery Charge
— — 863 nC
Tj = 25°C, IS = 3.0A, VGS = 0V ➃
Tj = 25°C, IF = 3.0A, di/dt ≥ 100A/µs
VDD ≤ 25V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 10.4 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
|
PDF 파일 내의 페이지 : 총 8 페이지
제조업체: International Rectifier
( ir )
IRHQ8110 mosfet
데이터시트 다운로드 :
[ IRHQ8110.PDF ]
[ IRHQ8110 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
