IRHQ57214SE 반도체 회로 부품 판매점
RADIATION HARDENED POWER MOSFET SURFACE MOUNT
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 International Rectifier |
www.DataSheet4U.com
PD-93881C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level
IRHQ57214SE 100K Rads (Si)
RDS(on)
1.5Ω
ID
1.9A
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects(SEE) with useful
performance up to an LET of 80 (MeV/(mg/cm2)). The
combination of low RDS(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control.
These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature
stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHQ57214SE
250V, QUAD N-CHANNEL
5 TECHNOLOGY
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
1.9
1.2
7.6
12
0.1
±20
30
1.9
1.2
9.9
-55 to 150
300 (for 5s)
0.89 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
05/19/05
IRHQ57214SE
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Ciss
Coss
Crss
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min Typ Max Units
Test Conditions
250 — —
V
VGS = 0V, ID = 1.0mA
— 0.28 — V/°C Reference to 25°C, ID = 1.0mA
— — 1.5 Ω
VGS = 12V, ID = 1.2A Ã
2.5 — 4.5 V
1.4 — — S ( )
—
—
— 10
— 25
µA
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 1.2A Ã
VDS= 200V ,VGS=0V
VDS = 200V,
—
—
—
—
100
-100
nA
— — 8.0
— — 2.1 nC
— — 3.4
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 1.9A
VDS = 125V
— — 25
—
—
—
—
20
35
ns
VDD = 125V, ID = 1.9A
VGS =12V, RG = 7.5Ω
— — 20
— 6.1 — nH
Measured from the center of
drain pad to center of source pad
— 338 —
— 53 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
— 2.6 —
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS
ISM
VSD
trr
QRR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
— — 1.9
— — 7.6
A
— — 1.2 V
— — 168 ns
— — 771 nC
Tj = 25°C, IS = 1.9A, VGS = 0V Ã
Tj = 25°C, IF = 1.9A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 10.4 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
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IRHQ57214SE mosfet
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