IRHQ58110 반도체 회로 부품 판매점
(IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
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 International Rectifier |
www.DataSheet4U.com
PD - 94211A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level RDS(on)
IRHQ57110 100K Rads (Si) 0.27Ω
IRHQ53110 300K Rads (Si) 0.27Ω
IRHQ54110 600K Rads (Si) 0.27Ω
IRHQ58110 1000K Rads (Si) 0.29Ω
ID
4.6A
4.6A
4.6A
4.6A
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHQ57110
100V, Quad N-CHANNEL
RAD-Hard™ HEXFET®
4# TECHNOLOGY
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
4.6
2.9 A
18.4
12 W
0.1 W/°C
±20 V
47 mJ
4.6 A
1.2 mJ
6.1 V/ns
-55 to 150
oC
300 (for 5s)
0.89 (Typical)
g
1
08/01/01
IRHQ57110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
—
—
—
2.0
3.3
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—— V
0.13 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.31
— 0.27 Ω
— 4.0 V
— — S( )
—
—
10
25
µA
— 100
— -100 nA
— 13
— 4.0 nC
— 3.9
VGS = 12V, ID = 4.6A ➃
VGS = 12V, ID = 2.9A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 2.9A ➃
VDS= 80V, VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 4.6A
VDS = 50V
— 20
— 24
— 32 ns
VDD = 50V, ID = 4.6A,
VGS = 12V, RG = 7.5Ω
— 90
6.1 — nH Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 371 —
— 108 —
— 3.0 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
4.6
18.4
A
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 173 nS
QRR Reverse Recovery Charge
— — 863 nC
Tj = 25°C, IS = 4.6A, VGS = 0V ➃
Tj = 25°C, IF = 4.6A, di/dt ≤ 100A/µs
VDD ≤ 25V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
— — 11.8
°C/W
— — 60
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
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IRHQ58110 mosfet
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IRHQ58110
(IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT - International Rectifier
