FDY100PZ 반도체 회로 부품 판매점
Single P-Channel Specified PowerTrench MOSFET
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 Fairchild Semiconductor |
www.DataSheet4U.com
January 2006
FDY100PZ
Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET
General Description
This Single P-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = – 2.5v.
Applications
• Li-Ion Battery Pack
Features
• – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS = – 4.5 V
RDS(ON) = 1.6 Ω @ VGS = – 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant
1S
G
D
G1
S2
3D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a) 1a)
Power Dissipation (Steady State)
(Note 1a) 1a)
(Note 1b) 1b)
Operating and Storage Junction Temperature
Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 1a)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
A
FDY100PZ
7’’
Ratings
– 20
±8
– 350
– 1000
625
446
–55 to +150
200
280
Tape width
8mm
Unit
s
V
V
mA
mW
°C
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDY100PZ Rev A
www.fairchildsemi.com
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage,
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
Dynamic Characteristics
VGS = 0 V,
ID = – 250 µA
ID = – 250 µA, Referenced to 25°C
VDS = – 16 V, VGS = 0 V
VGS = ± 8 V, VDS = 0 V
VDS = VGS,
ID = – 250 µA
ID = 250 µA, Referenced to 25°C
VGS = – 4.5 V, ID = – 350 mA
VGS = – 2.5 V, ID = – 300 mA
VGS = – 1.8 V, ID = – 150 mA
VGS = – 4.5 V, ID = – 350 mA,
TJ =125°C
VDS = – 5 V, ID = – 350 mA
– 20
V
15 mV/°C
– 3 µA
± 10 µA
– 0.65 –1.0 – 1.5 V
–3 mV/°C
0.5 1.2
0.8 1.6
1.3 2.7
0.7 1.6
Ω
1S
Ciss Input Capacitance
VDS = – 10 V, V GS = 0 V,
Coss Output Capacitance
f = 1.0 MHz
Crss Reverse Transfer Capacitance
100 pF
30 pF
15 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = – 10 V, ID = – 0.5 A,
VGS = – 4.5 V, RGEN = 6 Ω
VDS = – 10 V, ID = – 350 mA,
VGS = – 4.5 V
6 12
13 23
8 16
12
1.0 1.4
0.2
0.3
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = – 150 m A(Note 2)
Voltage
–0.8 – 1.2 V
trr Diode Reverse Recovery Time IF = – 350 mA,
Qrr Diode Reverse Recovery Charge dIF/dt = 100 A/µs
11 ns
2 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 200°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY100PZ Rev A
www.fairchildsemi.com
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FDY100PZ mosfet
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