IRHY93130CM 반도체 회로 부품 판매점
RADIATION HARDENED POWER MOSFET THRU-HOLE
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 International Rectifier |
www.DataSheet4U.com
PD - 91400C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY9130CM
JANSR2N7382
100V, P-CHANNEL
REF: MIL-PRF-19500/615
RAD Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHY9130CM 100K Rads (Si)
IRHY93130CM 300K Rads (Si)
RDS(on)
0.30Ω
0.30Ω
ID
-11A
-11A
QPL Part Number
JANSR2N7382
JANSF2N7382
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-11
-7.0 A
-44
75 W
0.6 W/°C
±20 V
150 mJ
-11 A
7.5 mJ
-16
-55 to 150
V/ns
oC
300 (0.063 in (1.6mm)from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
06/13/02
IRHY9130CM, JANSR2N7382
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage -100
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
—
—
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
2.5
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—— V
-0.11 — V/°C
Test Conditions
VGS =0 V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
— 0.30
— 0.35
Ω
VGS = -12V, ID = - 7.0A
VGS = -12V, ID = - 11A
— -4.0 V
— — S( )
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = - 7.0A
—
—
-25
-250
µA
VDS= - 80V,VGS=0V
VDS = - 80V
VGS = 0V, TJ = 125°C
— -100
— 100 nA
VGS = -20V
VGS = 20V
— 45
VGS = -12V, ID = - 11A
— 10 nC
VDS = - 50V
— 25
— 30
— 50
— 70 ns
VDD = - 50V, ID = - 11A,
RG = 7.5Ω
— 70
6.8 —
nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 1200 —
— 310 —
— 80 —
pF
VGS = 0V, VDS = - 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ➀
—
—
—
—
-11
-44
A
VSD Diode Forward Voltage
— — -3.0 V
Tj = 25°C, IS = - 11A, VGS = 0V ➃
trr Reverse Recovery Time
— — 250 nS Tj = 25°C, IF = - 11A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge
— — 1.0 µC
VDD ≤ - 25V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
— — 1.67
°C/W
— — 80
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRHY93130CM mosfet
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