IRHY57234CMSE 반도체 회로 부품 판매점
RADIATION HARDENED POWER MOSFET THRU-HOLE
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 International Rectifier |
www.DataSheet4U.com
PD - 93823
RADIATION HARDENED
POWER MOSFET
THRU-HOLE ( TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHY57234CMSE 100K Rads (Si) 0.41Ω 10A
IRHY57234CMSE
250V, N-CHANNEL
4# TECHNOLOGY
c
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
10
6.4 A
40
75 W
0.6 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
±20
58
10
7.5
2.4
-55 to 150
V
mJ
A
mJ
V/ns
oC
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3( Typical )
g
For footnotes refer to the last page
www.irf.com
1
01/31/01
IRHY57234CMSE
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
250
—
—
2.5
6.0
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
Typ Max Units
—— V
0.30 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.41 Ω
VGS = 12V, ID = 6.4A ➃
— 4.5
——
— 10
— 25
— 100
— -100
— 28
— 7.4
— 12
— 25
— 100
— 35
— 30
6.8 —
1016
157
9.0
—
—
—
V
S( )
µA
nA
nC
ns
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 6.4A ➃
VDS= 200V ,VGS=0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 10A
VDS = 125V
VDD = 125V, ID = 10A,
VGS =12V, RG = 7.5Ω
nH Measured from drain lead (6mm
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode) — —
ISM Pulse Source Current (Body Diode) ➀
——
10
40
A
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — 1.2 V
— — 300 nS
— — 3.1 µC
Tj = 25°C, IS = 10A, VGS = 0V ➃
Tj = 25°C, IF = 10A, di/dt ≥ 100A/µs
VDD ≤ 25V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
— — 1.67
— — 80
Units
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
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IRHY57234CMSE mosfet
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