IRHF57234SE 반도체 회로 부품 판매점
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
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 International Rectifier |
www.DataSheet4U.com
PD - 93831A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF57234SE 100K Rads (Si)
RDS(on)
0.42Ω
IRHF57234SE
JANSR2N7499T2
250V, N-CHANNEL
REF: MIL-PRF-19500/706
5 TECHNOLOGY
ID QPL Part Number
5.2A JANSR2N7499T2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
5.2
3.3 A
20.8
25 W
0.2 W/°C
±20 V
142 mJ
5.2 A
2.5 mJ
6.8
-55 to 150
V/ns
oC
300 ( 0.063 in./1.6mm from case for 10s)
0.98(Typical)
g
For footnotes refer to the last page
www.irf.com
1
06/16/04
DataSheet4 U .com
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IRHF57234SE, JANSR2N7499T2
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
250
—
—
2.5
4.0
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
Typ Max Units
——
V
0.31 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.42 Ω
VGS = 12V, ID = 3.3A Ã
— 4.5
——
— 10
— 25
— 100
— -100
— 28
— 7.4
— 12
— 25
— 100
— 35
— 40
7.0 —
1007
155
8
—
—
—
V
S( )
µA
nA
nC
ns
VDS = VGS, ID = 1.0mA
VDS >= 15V, IDS = 3.3A Ã
VDS= 200V ,VGS=0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 5.2A
VDS = 125V
VDD = 125V, ID = 5.2A
VGS =12V, RG = 7.5Ω
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 5.2 A
ISM Pulse Source Current (Body Diode) À
— — 20.8
VSD Diode Forward Voltage
— — 1.5 V
Tj = 25°C, IS = 5.2A, VGS = 0V Ã
trr Reverse Recovery Time
— — 287 ns Tj = 25°C, IF = 5.2A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
— — 2.3 µC
VDD ≤ 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
175
5.0
—
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2 www.irf.com
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IRHF57234SE mosfet
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