IRHF53130 반도체 회로 부품 판매점
(IRHF5x130) RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
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 International Rectifier |
www.DataSheet4U.com
PD - 93789A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF57130 100K Rads (Si)
IRHF53130 300K Rads (Si)
IRHF54130 600K Rads (Si)
IRHF58130 1000K Rads (Si)
RDS(on)
0.08Ω
0.08Ω
0.08Ω
0.10Ω
ID
11.7A
11.7A
11.7A
11.7A
IRHF57130
100V, N-CHANNEL
R5 TECHNOLOGY
TO-39
International Rectifier’s R5TM technology provides Features:
high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened
cations. These devices have been characterized for n Ultra Low RDS(on)
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
n
n
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
of low RDS(on) and low gate charge reduces the power n Repetitive Avalanche Ratings
losses in switching applications such as DC to DC n Dynamic dv/dt Ratings
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
eters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
11.7
7.4 A
47
25 W
0.2 W/°C
±20 V
173 mJ
11.7
A
2.5 mJ
4.9
-55 to 150
V/ns
oC
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
3/2/00
DataSheet4 U .com
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IRHF57130
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
—
—
2.0
8.7
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
Typ Max Units
—— V
0.12 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.08 Ω
VGS = 12V, ID = 7.4A
— 4.0
——
— 10
— 25
— 100
— -100
— 50
— 7.4
— 20
— 25
— 100
— 35
— 30
7.0 —
1038
362
45
—
—
—
V
S( )
µA
nA
nC
ns
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 7.4A
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 11.7A
VDS = 50V
VDD = 50V, ID = 11.7A
RG = 7.5Ω
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 11.7 A
ISM Pulse Source Current (Body Diode)
— — 47
VSD Diode Forward Voltage
— — 1.5 V
Tj = 25°C, IS = 11.7A, VGS = 0V
trr Reverse Recovery Time
— — 202 ns Tj = 25°C, IF = 11.7A, di/dt ≥ 100A/µs
QRR Reverse Recovery Charge
— — 982 µC
VDD ≤ 25V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
— — 5.0
°C/W
— — 175
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
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IRHF53130 mosfet
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IRHF53130
(IRHF5x130) RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) - International Rectifier
