MRF9030MBR1 반도체 회로 부품 판매점
The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs
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 Freescale Semiconductor |
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9030M/D
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors MRF9030MR1
N-Channel Enhancement-Mode Lateral MOSFETs MRF9030MBR1
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large-signal, common-source amplifier applications in
26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — -31 dBc
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW)
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
945 MHz, 30 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF9030MR1
CASE 1337-03, STYLE 1
TO-272-2
PLASTIC
MRF9030MBR1
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
MRF9030MR1
MRF9030MBR1
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22-A113
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+ 15, - 0.5
139
0.93
- 65 to +150
175
Max
1.08
Class
1 (Minimum)
M2 (Minimum)
C7 (Minimum)
C6 (Minimum)
Rating
3
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MMoOtorToOla,RInOc.L2A00R3 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9030MR1 MRF9030MBR1
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 0.7 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
VGS(th)
VGS(Q)
VDS(on)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
Coss
Crss
FUNCTIONAL TESTS (In Motorola Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
Two-Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
Two-Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
Two-Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
Min
—
—
—
2
3
—
—
—
—
—
18
37
—
—
—
—
—
—
Typ
—
—
—
2.9
3.8
0.23
2.7
49
27
1.2
20
41
-31
-13
20
40.5
-31
-12
Max Unit
10 µAdc
1 µAdc
1 µAdc
4 Vdc
5 Vdc
0.4 Vdc
—S
— pF
— pF
— pF
— dB
—%
-28 dBc
-9 dB
— dB
—%
— dBc
— dB
MRF9030MR1 MRF9030MBR1
2
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
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MRF9030MBR1 mosfet
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관련 데이터시트
MRF9030MBR1
RF Power Field Effect Transistors - Freescale Semiconductor
MRF9030MBR1
The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs - Freescale Semiconductor