FQD3N50C 반도체 회로 부품 판매점
500V N-Channel MOSFET
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 Fairchild Semiconductor |
FQD3N50C/FQU3N50C
500V N-Channel MOSFET
Features
• 2.5 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V
• Low gate charge ( typical 10 nC )
• Low Crss ( typical 8.5 pF)
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability
QFET®
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
D{
GS
D-PAK
FQD Series
GDS
Absolute Maximum Ratings
I-PAK
FQU Series
G{
●
◀▲
●
●
{
S
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD3N50C/FQU3N50C
500
2.5
1.5
10
± 30
200
2.5
3.5
4.5
35
0.28
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ
--
--
--
Max
3.5
50
110
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FQD3N50C/FQU3N50C Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FQD3N50C
FQD3N50C
FQU3N50C
Device
FQD3N50CTM
FQD3N50CTF
FQU3N50C
Package
D-PAK
D-PAK
I-PAK
Reel Size
380mm
380mm
-
Tape Width
16mm
16mm
-
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Off Characteristics
BVDSS
∆BVDSS/
∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
--
--
--
--
--
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.25 A
VDS = 40 V, ID = 1.25 A
2.0
--
(Note 4)
--
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
VDD = 250 V, ID = 2.5 A,
RG = 25 Ω
VDS = 400 V, ID = 2.5 A,
VGS = 10 V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
--
0.7
--
--
--
--
--
2.1
1.5
280
50
8.5
10
25
35
25
10
1.5
5.5
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 3 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 58mH, IAS = 2.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
(Note 4)
--
--
--
--
--
--
--
--
170
0.7
Quantity
2500
2500
70
Max.
Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
2.5 Ω
-- S
365 pF
65 pF
11 pF
30 ns
60 ns
80 ns
60 ns
13 nC
-- nC
-- nC
2.5 A
10 A
1.4 V
-- ns
-- µC
FQD3N50C/FQU3N50C Rev. A
2
www.fairchildsemi.com
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FQD3N50C mosfet
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