SFS9644 반도체 회로 부품 판매점
Advanced Power MOSFET
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 Fairchild Semiconductor |
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = -250V
Low RDS(ON) : 0.549 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 ” from case for 5-seconds
SFS9644
BVDSS = -250 V
RDS(on) = 0.8 Ω
ID = -4.9 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
-250
-4.9
-3.8
-20
+_ 30
150
-4.9
4.0
-4.8
40
0.32
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.13
62.5
Units
oC/W
©1999 Fairchild Semiconductor Corporation
Rev. B
SFS9644
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-250 -- -- V
-- -0.22 -- V/oC
-2.0 -- -4.0 V
-- -- -100 nA
-- -- 100
-- -- -10
-- -- -100 µA
-- -- 0.8 Ω
-- 5.2 -- Ω
-- 1205 1565
-- 175 265 pF
-- 65 100
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-30V
VGS=30V
VDS=-250V
VDS=-200V,TC=125oC
VGS=-10V,ID=-2.5A
VDS=-40V,ID=-2.5A
O4
O4
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 14 40
-- 21 50
VDD=-125V,ID=-8.6A,
-- 47 105 ns RG=9.1Ω
-- 18 45
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain( “ Miller “ ) Charge
-- 45 58
-- 8.7 --
-- 23.4 --
VDS=-200V,VGS=-10V,
nC ID=-8.6A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -4.9
Integral reverse pn-diode
A
-- -20
in the MOSFET
O4 -- -- -5.0 V TJ=25oC,IS=-4.9A,VGS=0V
-- 210 -- ns TJ=25oC,IF=-8.6A
-- 1.82 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=10mH, IAS=-4.9A, VDD=-50V, RG=27Ω*, Starting TJ =25oC
O <_ <_ <_3 ISD -8.6A, di/dt 450A/µs, VDD BVDSS , Starting TJ =25oC
O <_4 Pulse Test : Pulse Width = 250 µs, Duty Cycle 2%
O5 Essentially Independent of Operating Temperature
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SFS9644 mosfet
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