SFP9614 반도체 회로 부품 판매점
Advanced Power MOSFET
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 Fairchild Semiconductor |
Advanced Power MOSFET
SFP9614
FEATURES
ν Avalanche Rugged Technology
ν Rugged Gate Oxide Technology
ν Lower Input Capacitance
ν Improved Gate Charge
ν Extended Safe Operating Area
ν Lower Leakage Current : -10 µA (Max.) @ VDS = -250V
ν Low RDS(ON) : 3.5 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BVDSS = -250 V
RDS(on) = 4.0 Ω
ID = -1. 6 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
-250
-1.6
-1.0
-6.5
+_ 30
112
-1.6
2.0
-4.8
20
0.16
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
6.25
--
62.5
Units
oC/W
Rev. B1
2001 Fairchild Semiconductor Corporation
SFP9614
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller” ) Charge
-250 -- --
-- -0.21 --
-2.0 -- -4.0
-- -- -100
-- -- 100
-- -- -10
-- -- -100
-- -- 4.0
-- 1.0 --
-- 225 295
-- 35 55
-- 13 20
-- 10 30
-- 18 45
-- 24 60
-- 11 30
-- 9 11
-- 2.0 --
-- 4.6 --
V
V/oC
V
nA
µA
Ω
S
pF
ns
nC
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-30V
VGS=30V
VDS=-250V
VDS=-200V,TC=125oC
VGS=-10V,ID=-0.8A
VDS=-40V,ID=-0.8A
O4
O4
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
VDD=-125V,ID=-1.6A,
RG=24Ω
See Fig 13
O4 O5
VDS=-200V,VGS=-10V,
ID=-1.6A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -1.6
Integral reverse pn-diode
A
-- -6.5
in the MOSFET
O4 -- -- -4.0 V TJ=25oC,IS=-1.6A,VGS=0V
-- 130 -- ns TJ=25oC,IF=-1.6A
-- 0.61 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=70mH, IAS=-1.6A, VDD=-50V, RG=27Ω*, Starting TJ =25oC
O3 ISD<_ -1.6A, di/dt<_250A/µs, VDD<_BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250µs, Duty Cycle <_ 2%
O5 Essentially Independent of Operating Temperature
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SFP9614 mosfet
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