NTE2935 반도체 회로 부품 판매점
MOSFET N-Channel / Enhancement Mode High Speed Switch
|
|
 NTE |
NTE2935
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Lower Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower RDS(on): 0.638Ω Typ
D Lower Leakage Current: 10µA (Max) @ VDS = 500V
Absolute Maximum Ratings:
Drain–to–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Drain Current, ID
Continuous
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W/°C
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 641mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.5mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.46°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 30mH, IAS = 6.2A, VDD = 50V, RG = 27Ω, Starting TJ = +25°C.
Note 3. ISD ≤ 8A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, Starting TJ = +25°C.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
Breakdown Voltage Temperature
Coefficient
∆V(BR)DSS/ ID = 250µA
∆TJ
Gate Threshold Voltage
VGS(th) VDS = 5V, ID = 250µA
Gate–Source Leakage Forward
IGSS VGS = 30V
Gate–Source Leakage Reverse
IGSS VGS = –30V
Drain–to–Source Leakage Current
IDSS VDS = 500V
VDS = 400V, TC = +125°C
Static Drain–Source ON Resistance RDS(on) VGS = 10V, ID = 3.1A, Note 4
Forward Transconductance
gfs VDS = 50V, ID = 3.1A, Note 4
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn–On Delay Time
Rise Time
td(on)
tr
VDD = 250V, ID = 8A, RG = 9.1Ω,
Note 4, Note 5
Turn–Off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Gate–Source Charge
Qg VGS = 10V, ID = 8A, VDS = 400V,
Qgs Note 4, Note 5
Gate–Drain (“Miller”) Charge
Qgd
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS (Body Diode)
ISM (Body Diode) Note 1
VSD TJ = +25°C, IS = 6.2A, VGS = 0V, Note 4
trr TJ = +25°C, IF = 8A, diF/dt = 100A/µs,
Qrr Note 4
Min Typ Max Unit
500 – – V
– 0.66 – V/°C
2.0 – 4.0 V
– – 100 nA
– – –100 nA
– – 10 µA
– – 100 µA
– – 0.85 Ω
– 5.73 – mhos
– 1190 1550 pF
– 150 175 pF
– 166 75 pF
– 18 45 ns
– 22 55 ns
– 83 175 ns
– 30 70 ns
– 57 74 nC
– 7.5 – nC
– 28.4 – nC
– – 6.2 A
– – 34 A
– – 1.4 V
– 370 – ns
– 3.9 – µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%.
Note 5. Essentially independent of operating temperature.
|
PDF 파일 내의 페이지 : 총 3 페이지
제조업체: NTE
( nte )
NTE2935 mosfet
데이터시트 다운로드 :
[ NTE2935.PDF ]
[ NTE2935 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
NTE293
Silicon Complementary Transistors Audio Amplifier and Driver - NTE
NTE2930
MOSFET N-Channel / Enhancement Mode High Speed Switch - NTE
NTE2931
MOSFET N-Channel / Enhancement Mode High Speed Switch - NTE
NTE2932
MOSFET N-Channel / Enhancement Mode High Speed Switch - NTE
NTE2933
MOSFET N-Channel / Enhancement Mode High Speed Switch - NTE
NTE2934
MOSFET N-Channel / Enhancement Mode High Speed Switch - NTE
NTE2935
MOSFET N-Channel / Enhancement Mode High Speed Switch - NTE
NTE2936
MOSFET N-Channel / Enhancement Mode High Speed Switch - NTE