FRF250H 반도체 회로 부품 판매점
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs
|
|
 Intersil |
June 1998
FRF250D, FRF250R,
FRF250H
23A, 200V, 0.115 Ohm, Rad Hard,
N-Channel Power MOSFETs
Features
• 23A, 200V, RDS(on) = 0.115Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
• Gamma Dot
• Photo Current
• Neutron
- Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
- 12.0nA Per-RAD(Si)/sec Typically
- Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Description
The Intersil Corporation has designed a series of SECOND GENERATION hard-
ened power MOSFETs of both N and P channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose
hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness
ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose
rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and
2E12 with current limiting.
Package
TO-254AA
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Symbol
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
4-1
FRF250D, R, H
200
200
23
15
69
±20
125
50
1.00
69
23
69
-55 to +150
300
UNITS
V
V
A
A
A
V
W
W
W/oC
A
A
A
oC
oC
File Number 3227.1
FRF250D, FRF250R, FRF250H
Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER
Drain-Source Breakdown Volts
Gate-Threshold Volts
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero-Gate Voltage
Drain Current
Rated Avalanche Current
Drain-Source On-State Volts
Drain-Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate-Charge Threshold
Gate-Charge On State
Gate-Charge Total
Plateau Voltage
Gate-Charge Source
Gate-Charge Drain
Diode Forward Voltage
Reverse Recovery Time
Junction-To-Case
Junction-To-Ambient
SYMBOL
BVDSS
VGS(th)
IGSSF
IGSSR
IDSS1
IDSS2
IDSS3
IAR
VDS(on)
RDS(on)
td(on)
tr
td(off)
tf
QG(th)
QG(on)
QGM
VGP
QGS
QGD
VSD
TT
Rθjc
Rθja
TEST CONDITIONS
VGS = 0, ID = 1mA
VDS = VGS, ID = 1mA
VGS = +20V
VGS = -20V
VDS = 200V, VGS = 0
VDS = 160V, VGS = 0
VDS = 160V, VGS = 0, TC = +125oC
Time = 20µs
VGS = 10V, ID = 23A
VGS = 10V, ID = 15A
VDD = 100V, ID = 23A
Pulse Width = 3µs
Period = 300µs, Rg = 25Ω
0 ≤ VGS ≤ 10 (See Test Circuit)
VDD = 100V, ID = 23A
IGS1 = IGS2
0 ≤ VGS ≤ 20
ID = 23A, VGD = 0
I = 23A; di/dt = 100A/µs
Free Air Operation
LIMITS
MIN MAX
200 -
2.0 4.0
- 100
- 100
-1
- 0.025
- 0.25
- 69
- 2.78
- 0.115
- 156
- 510
- 574
- 280
5 20
75 298
140 558
3 14
16 66
36 144
0.6 1.8
- 1700
- 1.0
- 48
UNITS
V
V
nA
nA
mA
A
V
Ω
ns
nc
V
nc
V
ns
oC/W
VGS = 12V
0V
VDD
RGS
RL
VDS
DUT
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
CURRENT
TRANSFORMER
+
IAS
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS ≤ 20V
50Ω
tP
0V
50Ω
DUT
+
VDD
-
50V -150V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-2
|
PDF 파일 내의 페이지 : 총 6 페이지
제조업체: Intersil
( intersil )
FRF250H mosfet
데이터시트 다운로드 :
[ FRF250H.PDF ]
[ FRF250H 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
FRF250D
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs - Intersil
FRF250H
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs - Intersil
FRF250R
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs - Intersil