APT12040JLL 반도체 회로 부품 판매점
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
|
 Advanced Power Technology |
APT12040JLL
1000V 24A 0.400W
POWER MOS 7TM
SS
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
G D SOT-227
ISOTOP®
"UL Recognized"
D
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg • Popular SOT-227 Package
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
APT12040JLL
Drain-Source Voltage
LContinuous Drain Current @ TC = 25°C
APulsed Drain Current 1
NICGate-Source Voltage Continuous
HGate-Source Voltage Transient
EC NTotal Power Dissipation @ TC = 25°C
T IOLinear Derating Factor
E TOperating and Storage Junction Temperature Range
NC ALead Temperature: 0.063" from Case for 10 Sec.
VA RMAvalanche Current 1 (Repetitive and Non-Repetitive)
D ORepetitive Avalanche Energy 1
A INFSingle Pulse Avalanche Energy 4
1200
24
96
±30
±40
595
4.76
-55 to 150
300
22
50
3200
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
1200
24
3
0.400
100
500
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
APT12040JLL
Symbol Characteristic
Test Conditions
MIN TYP MAX
Ciss
Coss
Input Capacitance
Output Capacitance
VGS = 0V
VDS = 25V
8690
1200
Crss Reverse Transfer Capacitance
f = 1 MHz
908
Qg
Qgs
ALQgd
ICtd(on)
Ntr
Htd(off)
EC Ntf
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 10V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6W
E T TIOSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
NC MASymbol
VA RIS
D FOISM
A INVSD
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
306
37
182
21
14
67
24
MIN TYP
t rr Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
1250
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
31.0
dv/dt Peak Diode Recovery dv/dt 5
MAX
24
96
1.3
10
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RqJC
RqJA
Junction to Case
Junction to Ambient
0.21
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 11.11mH, RG = 25W, Peak IL = 24A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS £ -ID[Cont.] di/dt £ 700A/µs VR £ VDSS TJ £ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP®) Package Outline
r = 4.0 (.157)
(2 places)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Gate
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
|
PDF 파일 내의 페이지 : 총 2 페이지
제조업체: Advanced Power Technology
( apt )
APT12040JLL mosfet
데이터시트 다운로드 :
[ APT12040JLL.PDF ]
[ APT12040JLL 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
APT12040JLL
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. - Advanced Power Technology
