TN0601L 반도체 회로 부품 판매점
N-Channel 60-V (D-S) MOSFETs
|
|
 Vishay Telefunken |
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
TN0601L
VN0606L
VN66AFD
V(BR)DSS Min (V)
60
rDS(on) Max (W)
1.8 @ VGS = 10 V
3 @ VGS = 10 V
3 @ VGS = 10 V
VGS(th) (V)
0.5 to 2
0.8 to 2
0.8 to 2.5
ID (A)
0.47
0.33
1.46
FEATURES
D Low On-Resistance: 1.2 W
D Low Threshold: <1.6 V
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 9 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-226AA
(TO-92)
S1
G2
D3
Top View
TN0601L
VN0606L
Device Marking
Front View
TN0601L
“S” TN
0601L
xxyy
VN0606L
“S” VN
0606L
xxyy
“S” = Siliconix Logo
xxyy = Date Code
TO-220SD
(Tab Drain)
S1
G2
D3
Top View
VN66AFD
Device Marking
Front View
VN66AFD
VN66AFD
“S” xxyy
“S” = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0601L
VN0606L
VN66AFDb
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 100_C
Power Dissipation
Thermal Resistance, Junction-to-Ambient
TA= 25_C
TA= 100_C
Thermal Resistance, Junction-to-Case
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ, Tstg
60
"20
0.47
0.29
1.5
0.8
0.32
156
60
"30
0.33
0.21
1.6
0.8
0.32
156
–55 to 150
60
"30
1.46
0.92
3
15
6
8.3
Unit
V
A
W
_C/W
_C
Document Number: 70201
S-04279—Rev. E, 16-Jul-01
www.vishay.com
11-1
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
TN0601L
VN0606L
VN66AFD
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate VoltageDrain Current
On-State Drain Currentb
Drain-Source On-Resistanceb
Forward Transconductanceb
Common Source Output Conductanceb
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
gos
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 0.25 mA
VDS = VGS, ID = 1 mA
VDS = 0 V, VGS = "30 V
TC = 125_C
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
TJ = 125_C
VDS = 48 V, VGS = 0 V
TJ = 125_C
TC = 125_C
VDS = 10 V, VGS = 4.5 V
VDS = 10 V, VGS = 10 V
VGS = 3.5 V, ID = 0.04 A
VGS = 4.5 V, ID = 0.25 A
TJ = 125_C
VGS = 5 V, ID = 0.3 A
VGS = 10 V, ID = 0.5 A
TJ = 125_C
VGS = 10 V, ID = 1 A
TC = 125_C
VDS = 10 V, ID = 0.5 A
VDS = 10 V, ID = 0.1 A
70 60
60
60
1.6 0.5 2
V
1.7 0.8 2 0.8 2.5
"100
"100
"10
"500 nA
10
500
1 1 mA
100
10
0.5 0.25
2.4 1
1.5
1.5
A
45
23
3.8 6
2.3 5
W
1.2 3
2.3 6
1.3 1.8
3
2.5 6
350 200
0.3
170
170
mS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1 MHz
35
25
6
60 50 50
50 40 40 pF
10 10 10
Turn-On Time
Turn-Off Time
tON
tOFF
VDD = 25 V, RL = 23 W
ID ^ 1 A, VGEN = 10 V
RG = 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing..
b. Pulse test: PW v 300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
8
9
15 10 15
ns
15 10 15
VNDQ06
www.vishay.com
11-2
Document Number: 70201
S-04279—Rev. E, 16-Jul-01
|
PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Vishay Telefunken
( vishay )
TN0601L mosfet
데이터시트 다운로드 :
[ TN0601L.PDF ]
[ TN0601L 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
TN0601L
N-Channel 60-V (D-S) MOSFETs - Vishay Telefunken
TN0601L
N-Channel 60-V (D-S) MOSFETs - Vishay Telefunken
TN0601L
N-Channel 60-V (D-S) MOSFETs - Vishay Telefunken