IRF7752 반도체 회로 부품 판매점
Power MOSFET(Vdss=30V)
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 International Rectifier |
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
VDSS
30V
PD -94030A
IRF7752
HEXFET® Power MOSFET
RDS(on) max
0.030@VGS = 10V
0.036@VGS = 4.5V
ID
4.6A
3.9A
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
1
2
3
4
1 = D1
2 = S1
3 = S1
4 = G1
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
8
7
6
5
8 = D2
7 = S2
6 = S2
5 = G2
TSSOP-8
Max.
30
±4.6
±3.7
±37
1.0
0.64
8.0
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
125
Units
°C/W
1
3/25/01
IRF7752
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.030 –––
––– ––– 0.030
––– ––– 0.036
V/°C
Ω
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 4.6A
VGS = 4.5V, ID = 3.9A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
0.60 ––– 2.0
12 ––– –––
V VDS = VGS, ID = 250µA
S VDS = 10V, ID = 4.6A
IDSS Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -200 nA VGS = -12V
––– ––– 200
VGS = 12V
Qg Total Gate Charge
––– 9.0 –––
ID = 4.6A
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
––– 2.5 ––– nC VDS = 24V
––– 2.6 –––
VGS = 4.5V
td(on)
Turn-On Delay Time
––– 7.2 –––
VDD = 15V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 9.1 ––– ns ID = 1.0A
––– 25 –––
RG = 6.0Ω
––– 11 –––
VGS = 10V
Ciss Input Capacitance
––– 861 –––
VGS = 0V
Coss Output Capacitance
––– 210 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance
––– 25 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
25
23
Max. Units
0.91
37
A
1.3 V
––– ns
––– nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 0.91A, VGS = 0V
TJ = 25°C, IF = 0.91A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
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제조업체: International Rectifier
( ir )
IRF7752 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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