IRF330 판매점 - 5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET

IRF330 반도체 회로 부품 판매점

5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET

Intersil Corporation

Data Sheet

IRF330

March 1999 File Number 1570.4

5.5A, 400V, 1.000 Ohm, N-Channel

Power MOSFET

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17414.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF330

TO-204AA

IRF330

NOTE: When ordering, use the entire part number.

Features

• 5.5A, 400V

• rDS(ON) = 1.000Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

DRAIN

(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

IRF330

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

IRF330

400

5.5

3.5

±20

0.6

300

-55 to 150

300

260

UNITS

W/oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

Drain to Source Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Drain Current

On-State Drain Current (Note 2)

Gate to Source Leakage Current

Drain to Source On Resistance (Note 2)

Forward Transconductance (Note 2)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate to Source Charge

Gate to Drain “Miller” Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Internal Drain Inductance

BVDSS

VGS(TH)

IDSS

ID(ON)

IGSS

rDS(ON)

gfs

td(ON)

td(OFF)

Qg(TOT)

Qgs

Qgd

CISS

COSS

CRSS

ID = 250µA, VGS = 0V (Figure 10)

VGS = VDS, ID = 250µA

VDS = Rated BVDSS, VGS = 0V

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC

VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

VGS = ±20V

ID = 3.0A, VGS = 10V (Figures 8, 9)

VDS ≥ 10V, ID = 3.3A (Figure 12)

VDD = 200V, ID ≈ 5.5A, RG = 12Ω, RL = 36Ω,

VGS = 10V (Figures 17, 18) MOSFET Switching

Times are Essentially Independent of Operating

Temperature

VGS = 10V, ID = 5.5A, VDS = 0.8 x Rated BVDSS,

IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is

Essentially Independent of Operating Temperature

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)

Measured between the

Contact Screw on the

Flange that is Closer to

Source and Gate Pins and

the Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

Internal Source Inductance

LS Measured from the Source

Lead, 6mm (0.25in) from

the Flange and the Source

Bonding Pad

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

RθJC

RθJA

Free Air Operation

MIN

400

2.0

5.5

2.9

TYP MAX UNITS

--V

- 4.0 V

- 25 µA

- 250 µA

--A

±100 nA

0.8 1.0

Ω

4.0 -

11 17

20 29

35 56

15 24

21 35 nC

17 -

700 -

150 -

40 -

5.0 -

12.5 -

- 1.67 oC/W

- 30 oC/W

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제조업체: Intersil Corporation

( intersil )

IRF330 mosfet

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IRF330 반도체 회로 부품 판매점

5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET

국내 전력반도체 판매점

일반적인 전자부품 판매점

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