IR6210 반도체 회로 부품 판매점
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
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Preliminary Data Sheet 6.055A
IR6210
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
Features
• PWM Current Limit for Short Circuit Protection
• Over-Temperature Protection
• Active Output Negative Clamp
• Reverse Battery Protection
• Broken Ground Protection
• Short to VCC Protection
• Low Noise Charge Pump
• Sleep Mode Supply Current
• 4kV ESD Protection On All Pin
• Logic Ground Isolated From Power Ground
Vcc(op)
Rds(on)
Ilim
Tj(sd)
Eav
5v-50v
200mΩ
5A
170°C
200mJ
General Description:
The IR6210 is a 5 terminal monolithic HIGH SIDE SWITCH
with built in short circuit, over- temperature, ESD, inductive load
turn off capability and diagnostic feedback.
The on-chip protection circuit goes into PWM mode, limiting the
average current during short circuit if the drain current exceeds
5A. The protection circuit latches off the high side switch if the
junction temperature exceeds 170°C and latches on after the junc-
tion temperature falls by 10°C. The drain to source voltage is
actively clamped at 55V, improving its performance during turn
off with inductive loads.
The on-chip charge pump high side driver stage is floating and ref-
erenced to the source of the power MOSFET. Thus the logic to
power ground isolation can be as high as 50V. This allows opera-
tion with larger offset as well as controlling the switch during
load energy recirculation or regeneration.
A diagnostic pin is provided for status feedback of short circuit,
over temperature and open load detection.
Applications
• SolenoidDriver
• DC Motor Driver
Truth Table
Condition
Normal
Normal
Output Open
Output Open
Shorted Output
Shorted Output
Over-Temperature
Over-Temperature
In
H
L
H
L
H
L
H
L
Out
H
L
H
H
Current-Limiting
L
L
L
Dg
H
L
H
H
L
L
L
L
Block Diagram
Available Packages
To Order
IR6210
TO-220
(5-lead)
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IR6210
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which
damage to the device may occur. (Tc = 25°C unless otherwise specified.)
Minimum
Maximum
Units
Test Conditions
Vcc
Voffset
Vin
Iin
Vout
Iout
Vdg
Idg
Eav
ESD1
ESD2
PD
TJop
TStg
TL
Supply Voltage
Permanent
Reverse
Logic to Power Ground Offset
Input Voltage
Input Current
Output Voltage
Output Current
Diagnostic Output Voltage
Diagnostic Output Current
Repetitive Avalanche Energy
Electrostatic Discharge(Human Body Model)
Electrostatic Discharge (Machine Model)
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature (Soldering, 10 seconds)
-0.3
16
Vcc -50
-0.3
Vcc -50
Self-limited
-0.3
-40
-40
50
Vcc +0.3
30
10
Vcc +0.3
30
10
200
4000
1000
28
Self-limited
175
300
V
mA
V
V
mA
mJ
V
V
W
°C
Pin 3 to Pin 1
(1), for 10 seconds
I = 2A (2)
C = 100 pF, R = 1500Ω
C = 200 pF, R = 0Ω
Tcase=25°C
NOTES: (1) with 15k Ω resistors in input and diagnostic
(2) maximum frequency depends on heatsink (rectangular waveform)
Static Electrical Characteristics
(Tc = 25°C unless otherwise specified.)
Vccop
Iccoff
Iccon
Iccac
Vih
Vil
Ilon
Iloff
Ioh
Iol
Vdgl
Idgh
RDS(on)
Operating Voltage Range
Sleep Mode Supply Current
Supply Current (Average)
Supply Current (AC RMS)
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
On-State Input Current
Off-State Input Current
Output Leakage Current
Output Leakage Current
Low Level Diagnostic Output Voltage
Diagnostic Output Leakage Current
On-State Resistance
Minimum Typical Maximum Units
5 50 V
40 µA
3 mA
20 µA
2 2.5 V
1 1.8
10 70
1 30 µA
20
0 10
0.3 V
0 10 µA
150 200 mΩ
200
Test Conditions
Vcc=24V, Vin+0V
Vin = 5V
Vin = 5V
Vin = 3.5V
Vin = 0.4V
Vout = 6V
Vout = 0V
Idg = 1.6mA
Vdg = 5V
Iout = 1A
Vcc = 5V, Iout = 1A
Switching Electrical Characteristics
(VCC = 14V, Resistive Load (RL) = 12Ω, TC= 25°C.)
tc
Dc
ton
toff
dv/dton
dv/dtoff
Over-Current Cycle Time
Over-Current Duty Cycle
Turn-On Delay Time to 90%
Turn-Off Delay Time to 10%
Slew Rate On
Slew Rate Off
Minimum Typical Maximum Units
5 ms
10 %
70 µs
60
3 V/µs
5
Test Conditions
To Order
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IR6210 mosfet
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