SI6967DQ 반도체 회로 부품 판매점
Dual P-Channel 1.8-V (G-S) MOSFET
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 Vishay Siliconix |
Si6967DQ
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–8
rDS(on) (W)
0.030 @ VGS = –4.5 V
0.045 @ VGS = –2.5 V
0.070 @ VGS = –1.8 V
ID (A)
"5.0
"4.0
"3.0
TSSOP-8
D1 1 D
S1 2
S1 3
Si6967DQ
G1 4
Top View
8 D2
7 S2
6 S2
5 G2
S1
G1
S2
G2
D1 D2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
–8
"8
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
"5.0
"4.0
"30
–1.25
1.1
0.72
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
t v 10 sec
Steady State
RthJA
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70811
S-59525—Rev. C, 12-Oct-98
Typical
115
Maximum
110
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
Si6967DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "8 V
VDS = –6.4 V, VGS = 0 V
VDS = –6.4 V, VGS = 0 V, TJ = 70_C
VDS w –8 V, VGS = –4.5 V
VGS = –4.5 V, ID = –5.0 A
VGS = –2.5 V, ID = –4.0 A
VGS = –1.8 V, ID = –3.0 A
VDS = –8 V, ID = –5.0 A
IS = –1.25 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = –6 V, VGS = –4.5 V, ID = –5.0 A
VDD = –6 V, RL = 6 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
IF = –1.25 A, di/dt = 100 A/ms
Min Typ Max Unit
–0.45
–30
0.024
0.033
0.048
18
–0.68
"100
–1
–25
0.030
0.045
0.070
–1.1
V
nA
mA
A
W
S
V
20 40
4.5 nC
3.6
20 50
30 60
85 150 ns
50 90
50 100
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70811
S-59525—Rev. C, 12-Oct-98
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( vishay )
SI6967DQ mosfet
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