SI9955DY 반도체 회로 부품 판매점
Dual N-Channel Enhancement Mode MOSFET
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 Fairchild Semiconductor |
June 1999
Si9955DY*
Dual N-Channel Enhancement Mode MOSFET
General Description
These N-Channel Enhancement Mode MOSFETs are
produced using Fairchild Semiconductor's advance
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
Battery switch
Load switch
Motor controls
Features
3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V
RDS(ON) = 0.200 Ω @ VGS = 4.5 V
Low gate charge.
Fast switching speed.
High power and current handling capability.
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Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
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a) 78° C/W when
mounted on a 0.5 in2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
b) 125° C/W when
mounted on a 0.02 in2
pad of 2 oz. copper.
c) 135° C/W when
mounted on a 0.003 in2
pad of 2 oz. copper.
Si9955DY Rev. A
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제조업체: Fairchild Semiconductor
( fairchild )
SI9955DY mosfet
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